Band bending at the Si(1 0 0)-Si3N4 interface studied by photoreflectance spectroscopy

Kapil Dev, E. G. Seebauer

Research output: Contribution to journalArticlepeer-review

Abstract

Photoreflectance spectroscopy has been used to measure the band bending at the p-Si(1 0 0)-Si3N4 interface subjected to annealing and ion implantation. Upon annealing, unimplanted interfaces exhibit a constant band bending of about 0.77 eV, even though the spectral amplitude changes due to variations in the way minority carriers are annihilated at the interface. Implantation reduces the band banding, although subsequent annealing in stages up to 900 °C progressively restores the bending to its original value through pathways exhibiting a wide range of activation barriers.

Original languageEnglish (US)
Pages (from-to)80-87
Number of pages8
JournalSurface Science
Volume583
Issue number1
DOIs
StatePublished - May 20 2005

Keywords

  • Band bending
  • Defects
  • Interface
  • Photoreflectance spectroscopy
  • Silicon
  • Silicon nitride

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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