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Ballistic recovery in III-V nanowire transistors
M. J. Gilbert
, S. K. Banerjee
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peer-review
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Keyphrases
Dopant Atoms
100%
Ballistic
100%
III-V Nanowires
100%
Nanowire Transistor
100%
Three-dimensional (3D)
50%
High Energy
50%
Transistor
50%
Phonons
50%
Quantum Mechanical
50%
Real Space
50%
Polar Optical Phonons
50%
Energy Localization
50%
Quantum Wire
50%
Inelastic Scattering
50%
Device Simulation
50%
Energy Terms
50%
Moore's Law
50%
Self-powered
50%
Mechanical Device
50%
Tri-gate
50%
Deeply Buried
50%
Ballistic Behavior
50%
Engineering
Dopants
100%
Nanowire
100%
Real Space
50%
Optical Phonon
50%
Great Deal
50%
Quantum Wire
50%
Energy Term
50%
Moore's Law
50%
Material Science
Transistor
100%
Nanowire
100%
Doping (Additives)
66%