Bake stability of long-wavelength infrared HgCdTe photodiodes

A. Mestechkin, D. L. Lee, B. T. Cunningham, B. D.Mac Leod

Research output: Contribution to journalArticle


The bake stability was examined for HgCdTe wafers and photodiodes with CdTe surface passivation deposited by thermal evaporation. Electrical and electrooptical measurements were performed on various long-wavelength infrared HgCdTe photodiodes prior to and after a ten-day vacuum bakeout at 80°C, similar to conditions used for preparation of tactical dewar assemblies. It was found that the bakeout process generated additional defects at the CdTe/ HgCdTe interface and degraded photodiode parameters such as zero bias impedance, dark current, and photocurrent. Annealing at 220°C under a Hg vapor pressure following the CdTe deposition suppressed the interface defect generation process during bakeout and stabilized HgCdTe photodiode performance.

Original languageEnglish (US)
Pages (from-to)1183-1187
Number of pages5
JournalJournal of Electronic Materials
Issue number9
StatePublished - Sep 1 1995
Externally publishedYes


  • HgCdTe photodiodes]
  • long-wavelength infrared (LWIR) detectors
  • thermal annealing

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

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