Bake stability of long-wavelength infrared HgCdTe photodiodes

A. Mestechkin, D. L. Lee, B. T. Cunningham, B. D.Mac Leod

Research output: Contribution to journalArticle

Abstract

The bake stability was examined for HgCdTe wafers and photodiodes with CdTe surface passivation deposited by thermal evaporation. Electrical and electrooptical measurements were performed on various long-wavelength infrared HgCdTe photodiodes prior to and after a ten-day vacuum bakeout at 80°C, similar to conditions used for preparation of tactical dewar assemblies. It was found that the bakeout process generated additional defects at the CdTe/ HgCdTe interface and degraded photodiode parameters such as zero bias impedance, dark current, and photocurrent. Annealing at 220°C under a Hg vapor pressure following the CdTe deposition suppressed the interface defect generation process during bakeout and stabilized HgCdTe photodiode performance.

Original languageEnglish (US)
Pages (from-to)1183-1187
Number of pages5
JournalJournal of Electronic Materials
Volume24
Issue number9
DOIs
StatePublished - Sep 1 1995
Externally publishedYes

Keywords

  • HgCdTe photodiodes]
  • long-wavelength infrared (LWIR) detectors
  • thermal annealing

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

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