B incorporation and hole transport in fully strained heteroepitaxial Si1-xGex grown on Si(0 0 1) by gas-source MBE from Si2H6, Ge2H6, and B2H6

Q. Lu; M. R. Sardela; N. Taylor; G. Glass; T. R. Bramblett; T. Spila; J. R. Abelson; J. E. Greene

doi:10.1016/S0022-0248(97)00116-4

B incorporation and hole transport in fully strained heteroepitaxial Si_1-xGe_x grown on Si(0 0 1) by gas-source MBE from Si₂H₆, Ge₂H₆, and B₂H₆

Q. Lu, M. R. Sardela, N. Taylor, G. Glass, T. R. Bramblett, T. Spila, J. R. Abelson, J. E. Greene

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

B-doped Si_0.95Ge_0.05(0 0 1) films were grown on Si(0 0 1) by gas-source molecular beam epitaxy in the surface-reaction-limited regime using Si₂H₆, Ge₂H₆, and B₂H₆. Incorporated B concentrations CB (5 x 10¹⁶ - 3 x 10¹⁹ cm^-3) were found to increase linearly with increasing B₂H₆ flux J_B2H6 (6 x 10¹²-2 x 10¹⁵ cm^-2 s^-1) at constant film growth temperature T_s, and to decrease exponentially with 1/T_s at constant J_B2H6. The B₂H₆ reactive sticking probability ranged from ≃ 3.3 x 10^-4 at T_s = 600°C to 8.2 x 10^-4 at 700°C and film growth rates were independent of J_B2A6. Structural analysis by in-situ reflection high-energy electron diffraction combined with post-deposition high-resolution plan-view and cross-sectional transmission electron microscopy, high-resolution X-ray diffraction, and reciprocal lattice mapping showed that all films were fully strained, with measured relaxations less than the detection limit, ≃ 3 x 10^-5, and exhibited no evidence of dislocations or other extended defects. Room-temperature Si_0.95Ge_0.05 : B conductivity mobilities were equal to theoretical values and a factor of ≃ 2 higher than corresponding results for bulk Si. μ_c varied from 410 cm² V^-1 s^-1 with C_B = 5 x 10¹⁶ cm^-3 to 60 cm²V^-1s^-1 with C_B = 3 x 10¹⁹ cm-³.

Original language	English (US)
Pages (from-to)	97-107
Number of pages	11
Journal	Journal of Crystal Growth
Volume	179
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(97)00116-4
State	Published - Aug 1997

Keywords

B incorporation
Electronic properties
Hole mobilities
SiGe
Strain

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Online availability

10.1016/S0022-0248(97)00116-4

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B incorporation and hole transport in fully strained heteroepitaxial Si_1-xGe_x grown on Si(0 0 1) by gas-source MBE from Si₂H₆, Ge₂H₆, and B₂H₆. / Lu, Q.; Sardela, M. R.; Taylor, N.; Glass, G.; Bramblett, T. R.; Spila, T.; Abelson, J. R.; Greene, J. E.

In: Journal of Crystal Growth, Vol. 179, No. 1-2, 08.1997, p. 97-107.

Research output: Contribution to journal › Article › peer-review

@article{6e69323706e8451587fde11be35dd88e,

title = "B incorporation and hole transport in fully strained heteroepitaxial Si1-xGex grown on Si(0 0 1) by gas-source MBE from Si2H6, Ge2H6, and B2H6",

abstract = "B-doped Si0.95Ge0.05(0 0 1) films were grown on Si(0 0 1) by gas-source molecular beam epitaxy in the surface-reaction-limited regime using Si2H6, Ge2H6, and B2H6. Incorporated B concentrations CB (5 x 1016 - 3 x 1019 cm-3) were found to increase linearly with increasing B2H6 flux JB2H6 (6 x 1012-2 x 1015 cm-2 s-1) at constant film growth temperature Ts, and to decrease exponentially with 1/Ts at constant JB2H6. The B2H6 reactive sticking probability ranged from ≃ 3.3 x 10-4 at Ts = 600°C to 8.2 x 10-4 at 700°C and film growth rates were independent of JB2A6. Structural analysis by in-situ reflection high-energy electron diffraction combined with post-deposition high-resolution plan-view and cross-sectional transmission electron microscopy, high-resolution X-ray diffraction, and reciprocal lattice mapping showed that all films were fully strained, with measured relaxations less than the detection limit, ≃ 3 x 10-5, and exhibited no evidence of dislocations or other extended defects. Room-temperature Si0.95Ge0.05 : B conductivity mobilities were equal to theoretical values and a factor of ≃ 2 higher than corresponding results for bulk Si. μc varied from 410 cm2 V-1 s-1 with CB = 5 x 1016 cm-3 to 60 cm2V-1s-1 with CB = 3 x 1019 cm-3.",

keywords = "B incorporation, Electronic properties, Hole mobilities, SiGe, Strain",

author = "Q. Lu and Sardela, {M. R.} and N. Taylor and G. Glass and Bramblett, {T. R.} and T. Spila and Abelson, {J. R.} and Greene, {J. E.}",

note = "Funding Information: The authors gratefully acknowledge the financial support of the Office of Naval Research, through contract number N00014-81-K-0568 administered by Drs. A1 Goodman and Larry Cooper, the Semiconductor Research Corporation, and the Materials Science Division of the US Department of Energy under contract number DEAC0276ER01198 during the course of this research. We also thank N.-E. Lee for the TEM analyses.",

year = "1997",

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doi = "10.1016/S0022-0248(97)00116-4",

language = "English (US)",

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journal = "Journal of Crystal Growth",

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T1 - B incorporation and hole transport in fully strained heteroepitaxial Si1-xGex grown on Si(0 0 1) by gas-source MBE from Si2H6, Ge2H6, and B2H6

AU - Lu, Q.

AU - Sardela, M. R.

AU - Taylor, N.

AU - Glass, G.

AU - Bramblett, T. R.

AU - Spila, T.

AU - Abelson, J. R.

AU - Greene, J. E.

N1 - Funding Information: The authors gratefully acknowledge the financial support of the Office of Naval Research, through contract number N00014-81-K-0568 administered by Drs. A1 Goodman and Larry Cooper, the Semiconductor Research Corporation, and the Materials Science Division of the US Department of Energy under contract number DEAC0276ER01198 during the course of this research. We also thank N.-E. Lee for the TEM analyses.

PY - 1997/8

Y1 - 1997/8

N2 - B-doped Si0.95Ge0.05(0 0 1) films were grown on Si(0 0 1) by gas-source molecular beam epitaxy in the surface-reaction-limited regime using Si2H6, Ge2H6, and B2H6. Incorporated B concentrations CB (5 x 1016 - 3 x 1019 cm-3) were found to increase linearly with increasing B2H6 flux JB2H6 (6 x 1012-2 x 1015 cm-2 s-1) at constant film growth temperature Ts, and to decrease exponentially with 1/Ts at constant JB2H6. The B2H6 reactive sticking probability ranged from ≃ 3.3 x 10-4 at Ts = 600°C to 8.2 x 10-4 at 700°C and film growth rates were independent of JB2A6. Structural analysis by in-situ reflection high-energy electron diffraction combined with post-deposition high-resolution plan-view and cross-sectional transmission electron microscopy, high-resolution X-ray diffraction, and reciprocal lattice mapping showed that all films were fully strained, with measured relaxations less than the detection limit, ≃ 3 x 10-5, and exhibited no evidence of dislocations or other extended defects. Room-temperature Si0.95Ge0.05 : B conductivity mobilities were equal to theoretical values and a factor of ≃ 2 higher than corresponding results for bulk Si. μc varied from 410 cm2 V-1 s-1 with CB = 5 x 1016 cm-3 to 60 cm2V-1s-1 with CB = 3 x 1019 cm-3.

AB - B-doped Si0.95Ge0.05(0 0 1) films were grown on Si(0 0 1) by gas-source molecular beam epitaxy in the surface-reaction-limited regime using Si2H6, Ge2H6, and B2H6. Incorporated B concentrations CB (5 x 1016 - 3 x 1019 cm-3) were found to increase linearly with increasing B2H6 flux JB2H6 (6 x 1012-2 x 1015 cm-2 s-1) at constant film growth temperature Ts, and to decrease exponentially with 1/Ts at constant JB2H6. The B2H6 reactive sticking probability ranged from ≃ 3.3 x 10-4 at Ts = 600°C to 8.2 x 10-4 at 700°C and film growth rates were independent of JB2A6. Structural analysis by in-situ reflection high-energy electron diffraction combined with post-deposition high-resolution plan-view and cross-sectional transmission electron microscopy, high-resolution X-ray diffraction, and reciprocal lattice mapping showed that all films were fully strained, with measured relaxations less than the detection limit, ≃ 3 x 10-5, and exhibited no evidence of dislocations or other extended defects. Room-temperature Si0.95Ge0.05 : B conductivity mobilities were equal to theoretical values and a factor of ≃ 2 higher than corresponding results for bulk Si. μc varied from 410 cm2 V-1 s-1 with CB = 5 x 1016 cm-3 to 60 cm2V-1s-1 with CB = 3 x 1019 cm-3.

KW - B incorporation

KW - Electronic properties

KW - Hole mobilities

KW - SiGe

KW - Strain

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