B incorporation and hole transport in fully strained heteroepitaxial Si1-xGex grown on Si(0 0 1) by gas-source MBE from Si2H6, Ge2H6, and B2H6

Q. Lu, M. R. Sardela, N. Taylor, G. Glass, T. R. Bramblett, T. Spila, J. R. Abelson, J. E. Greene

Research output: Contribution to journalArticlepeer-review

Abstract

B-doped Si0.95Ge0.05(0 0 1) films were grown on Si(0 0 1) by gas-source molecular beam epitaxy in the surface-reaction-limited regime using Si2H6, Ge2H6, and B2H6. Incorporated B concentrations CB (5 x 1016 - 3 x 1019 cm-3) were found to increase linearly with increasing B2H6 flux JB2H6 (6 x 1012-2 x 1015 cm-2 s-1) at constant film growth temperature Ts, and to decrease exponentially with 1/Ts at constant JB2H6. The B2H6 reactive sticking probability ranged from ≃ 3.3 x 10-4 at Ts = 600°C to 8.2 x 10-4 at 700°C and film growth rates were independent of JB2A6. Structural analysis by in-situ reflection high-energy electron diffraction combined with post-deposition high-resolution plan-view and cross-sectional transmission electron microscopy, high-resolution X-ray diffraction, and reciprocal lattice mapping showed that all films were fully strained, with measured relaxations less than the detection limit, ≃ 3 x 10-5, and exhibited no evidence of dislocations or other extended defects. Room-temperature Si0.95Ge0.05 : B conductivity mobilities were equal to theoretical values and a factor of ≃ 2 higher than corresponding results for bulk Si. μc varied from 410 cm2 V-1 s-1 with CB = 5 x 1016 cm-3 to 60 cm2V-1s-1 with CB = 3 x 1019 cm-3.

Original languageEnglish (US)
Pages (from-to)97-107
Number of pages11
JournalJournal of Crystal Growth
Volume179
Issue number1-2
DOIs
StatePublished - Aug 1997

Keywords

  • B incorporation
  • Electronic properties
  • Hole mobilities
  • SiGe
  • Strain

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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