Avoiding Plasma Damage: MacEtch enabled β-Ga2O3FinFETs for On-Resistance Reduction and Hysteresis Elimination

Hsien Chih Huang; Zhongjie Ren; A. F.M. Anhar Uddin Bhuiyan; Zixuan Feng; Xixi Luo; Alex Q. Huang; Hongping Zhao; Xiuling Li

doi:10.1109/EDTM55494.2023.10103115

Avoiding Plasma Damage: MacEtch enabled β-Ga₂O₃FinFETs for On-Resistance Reduction and Hysteresis Elimination

Hsien Chih Huang, Zhongjie Ren, A. F.M. Anhar Uddin Bhuiyan, Zixuan Feng, Xixi Luo, Alex Q. Huang, Hongping Zhao, Xiuling Li

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Although highly promising, the performance of β-Ga2O3 transistors are far from their theoretical potentials. Structural innovations by adopting the FinFET geometry remains a relatively virgin field for this material. Here we report the results and discuss the prospect of β- Ga2O3 FinFETs fabricated by the plasma-free highly anisotropic metal-assisted chemical etching (MacEtch) method. A specific on-resistance (Ron,sp) of 6.5 mΩ· cm2 and a 370 V breakdown voltage are achieved. The MacEtch-formed FinFETs demonstrate near-zero (9.7 mV) hysteresis.

Original language	English (US)
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10103115
State	Published - 2023
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: Mar 7 2023 → Mar 10 2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	3/7/23 → 3/10/23

Keywords

MacEtch and FinFET
β-GaO

ASJC Scopus subject areas

Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering

Online availability

10.1109/EDTM55494.2023.10103115

Library availability

Discover UIUC Full Text

Cite this

Huang, H. C., Ren, Z., Anhar Uddin Bhuiyan, A. F. M., Feng, Z., Luo, X., Huang, A. Q., Zhao, H., & Li, X. (2023). Avoiding Plasma Damage: MacEtch enabled β-Ga₂O₃FinFETs for On-Resistance Reduction and Hysteresis Elimination. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10103115

Avoiding Plasma Damage: MacEtch enabled β-Ga₂O₃FinFETs for On-Resistance Reduction and Hysteresis Elimination. / Huang, Hsien Chih; Ren, Zhongjie; Anhar Uddin Bhuiyan, A. F.M. et al.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Huang, HC, Ren, Z, Anhar Uddin Bhuiyan, AFM, Feng, Z, Luo, X, Huang, AQ, Zhao, H & Li, X 2023, Avoiding Plasma Damage: MacEtch enabled β-Ga₂O₃FinFETs for On-Resistance Reduction and Hysteresis Elimination. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 3/7/23. https://doi.org/10.1109/EDTM55494.2023.10103115

Huang HC, Ren Z, Anhar Uddin Bhuiyan AFM, Feng Z, Luo X, Huang AQ et al. Avoiding Plasma Damage: MacEtch enabled β-Ga₂O₃FinFETs for On-Resistance Reduction and Hysteresis Elimination. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10103115

Huang, Hsien Chih ; Ren, Zhongjie ; Anhar Uddin Bhuiyan, A. F.M. et al. / Avoiding Plasma Damage : MacEtch enabled β-Ga₂O₃FinFETs for On-Resistance Reduction and Hysteresis Elimination. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

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abstract = "Although highly promising, the performance of β-Ga2O3 transistors are far from their theoretical potentials. Structural innovations by adopting the FinFET geometry remains a relatively virgin field for this material. Here we report the results and discuss the prospect of β- Ga2O3 FinFETs fabricated by the plasma-free highly anisotropic metal-assisted chemical etching (MacEtch) method. A specific on-resistance (Ron,sp) of 6.5 mΩ· cm2 and a 370 V breakdown voltage are achieved. The MacEtch-formed FinFETs demonstrate near-zero (9.7 mV) hysteresis.",

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