Abstract
A model calculation of Auger recombination in strained-layer InGaAs-InGaAlAs and InGaAs-InGaAsP quantum-well structures is presented as an extension of an empirical Auger theory based on the effective mass approximation. The valence band effective masses around k∥ = 0 are calculated by using a six-band Luttinger-Kohn hamiltonian and the quasi-Fermi levels are determined with a self-consistent Poisson-Schroodinger solver under the effective mass approximation. Three basic Auger processes are considered with the excited carrier being in a bound state of the quantum well, as well as an unbound state. The empirical model includes Fermi statistics as well as a revaluation of the Coulomb interaction overlap integral in the Auger recombination rate. Bound-unbound Auger transitions are proved to be an important nonradiative recombination mechanism in strained-layer quantum-well systems. Our calculations of Auger coefficient are in reasonable agreement with the experimental data.
Original language | English (US) |
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Pages (from-to) | 864-875 |
Number of pages | 12 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 31 |
Issue number | 5 |
DOIs | |
State | Published - May 1995 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering