A model calculation of Auger recombination in strained-layer InGaAs-InGaAlAs and InGaAs-InGaAsP quantum-well structures is presented as an extension of an empirical Auger theory based on the effective mass approximation. The valence band effective masses around k∥ = 0 are calculated by using a six-band Luttinger-Kohn hamiltonian and the quasi-Fermi levels are determined with a self-consistent Poisson-Schroodinger solver under the effective mass approximation. Three basic Auger processes are considered with the excited carrier being in a bound state of the quantum well, as well as an unbound state. The empirical model includes Fermi statistics as well as a revaluation of the Coulomb interaction overlap integral in the Auger recombination rate. Bound-unbound Auger transitions are proved to be an important nonradiative recombination mechanism in strained-layer quantum-well systems. Our calculations of Auger coefficient are in reasonable agreement with the experimental data.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering