Auger profile study of the influence of lattice mismatch on the LPE InGaAsP-InP heterojunction interface

Milton Feng, L. W. Cook, M. M. Tashima, G. E. Stillman, R. J. Blattner

Research output: Contribution to journalArticle

Abstract

Auger depth profiles of InGaAsP-InP heterojunctions grown by liquid phase epitaxial techniques under different lattice-mismatch conditions have been measured. Results are presented for samples with Δa/a less than ±0.03, and equal to +0.20 and -0.11% grown from solutions with X lGa=0.40%, XlP=0.36%, and X lAs=3.53, 3.78, and 3.40%, respectively. Only small differences in the chemical transition width of InP-InGaAsP and InGaAsP-InP interfaces (the last grown layer is listed first) have been observed when the lattice mismatch is less than ±0.03%. However, the width of the chemical transition region of the InP-InGaAsP interface increases more rapidly than that of the InGaAsP-InP interface as the lattice mismatch increases. This result can be understood in terms of the growth kinetics at the heterojunction interfaces.

Original languageEnglish (US)
Pages (from-to)697-699
Number of pages3
JournalApplied Physics Letters
Volume34
Issue number10
DOIs
StatePublished - Dec 1 1979

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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