Atomistic simulations of G-type phonons in silicon devices

Sanjiv Sinha, P. K. Schelling, S. R. Phillpot, K. E. Goodson

Research output: Contribution to conferencePaperpeer-review

Abstract

Heat conduction in highly compact silicon transistors is impeded due to localization of the electronically generated heat in the device drain. This work studies phonon transport from such heat sources using parallel molecular dynamics. Device Monte Carlo calculations provide an estimate of the size and energy density of the phonon source which is embedded in a one-dimensional crystal. We calculate the scattering times and decay channels for the excited phonons in the absence of thermal phonons. The hotspot is evolved in time and resulting atomic displacements are Fourier analyzed for various phonon modes. Simulations show that decay channels differ depending on the initial energy density of the hotspot. This approach provides a novel method of extracting anharmonic phonon scattering rates for non-equilibrium conditions in a transistor, where first order perturbation theory based calculations may be inaccurate.

Original languageEnglish (US)
Pages433-439
Number of pages7
DOIs
StatePublished - 2004
Externally publishedYes
EventProceedings of the ASME Heat Transfer/Fluids Engineering Summer Conference 2004, HT/FED 2004 - Charlotte, NC, United States
Duration: Jul 11 2004Jul 15 2004

Other

OtherProceedings of the ASME Heat Transfer/Fluids Engineering Summer Conference 2004, HT/FED 2004
Country/TerritoryUnited States
CityCharlotte, NC
Period7/11/047/15/04

ASJC Scopus subject areas

  • Engineering(all)

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