Atomistic simulation of band-to-band tunneling in III-V nanowire field-effect transistors

Dipanjan Basu; Leonard F. Register; Matthew J. Gilbert; Sanjay K. Banerjee

doi:10.1109/SISPAD.2009.5290220

Atomistic simulation of band-to-band tunneling in III-V nanowire field-effect transistors

Dipanjan Basu, Leonard F. Register, Matthew J. Gilbert, Sanjay K. Banerjee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Efficient atomistic simulators are required for full band treatments in strongly quantum confined systems, and for simulation of transport in emerging materials and devices such as graphene. Here we present an efficient transmission matrix based approach to ballistic quantum transport calculation for full three-dimensional, nearest-neighbor tight-binding based atomistic simulations. The method is then used to demonstrate how band-to-band tunneling increases the leakage current in OFF state in field-effect transistors with low band gap semiconductors such as InSb as channel material.

Original language	English (US)
Title of host publication	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs	https://doi.org/10.1109/SISPAD.2009.5290220
State	Published - 2009
Event	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States Duration: Sep 9 2009 → Sep 11 2009

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
Country/Territory	United States
City	San Diego, CA
Period	9/9/09 → 9/11/09

Keywords

Atomistic
Component
Quantum transport

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modeling and Simulation

Online availability

10.1109/SISPAD.2009.5290220

Library availability

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Basu, D., Register, L. F., Gilbert, M. J., & Banerjee, S. K. (2009). Atomistic simulation of band-to-band tunneling in III-V nanowire field-effect transistors. In SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices [5290220] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2009.5290220

Atomistic simulation of band-to-band tunneling in III-V nanowire field-effect transistors. / Basu, Dipanjan; Register, Leonard F.; Gilbert, Matthew J. et al.

SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices. 2009. 5290220 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Basu, D, Register, LF, Gilbert, MJ & Banerjee, SK 2009, Atomistic simulation of band-to-band tunneling in III-V nanowire field-effect transistors. in SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices., 5290220, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States, 9/9/09. https://doi.org/10.1109/SISPAD.2009.5290220

Basu D, Register LF, Gilbert MJ, Banerjee SK. Atomistic simulation of band-to-band tunneling in III-V nanowire field-effect transistors. In SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices. 2009. 5290220. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2009.5290220

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Atomistic simulation of band-to-band tunneling in III-V nanowire field-effect transistors

Abstract

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Keywords

ASJC Scopus subject areas

Online availability

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