Atomistic aspects of silicide reactions studied with STM

P. A. Bennett, S. A. Parikh, M. Y. Lee, David G. Cahill, M. Copel, R. M. Tromp

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We discuss atomistic aspects of the silicide contact reaction inferred primarily from STM observations of the prototype system Co/Si(111). For room temperature deposition and low coverage (0.01M1) we find that metal atoms exist as near-surface interstitials within the 7×7 reconstruction. Bond breaking associated with silicide formation occurs only at higher coverages. Deposition at 320C results in flat-topped triangular islands of epitaxial CoSi2 with a metastable 7-fold (111) interface, stabilized by the lateral silicon-silicide interface along the island edges. Some islands are covered with a 2×2 array of silicon adatoms. Very high temperature annealing (1200C) results in an 'impurity stabilized 1×1' surface which is in fact a lattice gas of ring-clusters that appear like tiny donuts or bagels in empty states STM images. These structures phase-separate from the clean 7×7 structure upon cooling below 850C.

Original languageEnglish (US)
Title of host publicationSilicides, Germanides, and Their Interfaces
EditorsRobert W. Fathauer, Siegfried Mantl, Leo J. Schowalter, K.N. Tu
PublisherPubl by Materials Research Society
Number of pages9
ISBN (Print)1558992197
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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