Atomic structure of cobalt silicide islands formed by reactive epitaxy

P. A. Bennett; S. A. Parikh; M. Y. Lee; David G. Cahill

doi:10.1016/0039-6028(94)90729-3

Atomic structure of cobalt silicide islands formed by reactive epitaxy

P. A. Bennett, S. A. Parikh, M. Y. Lee, David G. Cahill

Research output: Contribution to journal › Article › peer-review

Abstract

We report STM observations of the reaction of cobalt deposited on Si(111) at 320°C. At low coverage, coherent monolayer silicide islands form in a matrix of 7 × 7 reconstructed silicon. The islands take one of three forms: flat and recessed 0.3 Å, 2 × 2 corrugated and raised 0.8 Å or flat and raised 1.0 Å, where heights are given with respect to Si(111)-7 × 7. These structures are assigned to CoSi₂(111) with 7-fold (111) interface bonding, CoSi₂ with a 2 × 2 array of Si adatoms, and CoSi(111), respectively. Atomic models are given for the lateral silicide-silicon interface along the island edges. The role of these metastable, precursor structures in the kinetic path of the silicide reaction is described.

Original language	English (US)
Pages (from-to)	377-386
Number of pages	10
Journal	Surface Science
Volume	312
Issue number	3
DOIs	https://doi.org/10.1016/0039-6028(94)90729-3
State	Published - Jun 10 1994

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(94)90729-3

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@article{8a17689576ae4ee7bb44cb5e86ce414e,

title = "Atomic structure of cobalt silicide islands formed by reactive epitaxy",

abstract = "We report STM observations of the reaction of cobalt deposited on Si(111) at 320°C. At low coverage, coherent monolayer silicide islands form in a matrix of 7 × 7 reconstructed silicon. The islands take one of three forms: flat and recessed 0.3 {\AA}, 2 × 2 corrugated and raised 0.8 {\AA} or flat and raised 1.0 {\AA}, where heights are given with respect to Si(111)-7 × 7. These structures are assigned to CoSi2(111) with 7-fold (111) interface bonding, CoSi2 with a 2 × 2 array of Si adatoms, and CoSi(111), respectively. Atomic models are given for the lateral silicide-silicon interface along the island edges. The role of these metastable, precursor structures in the kinetic path of the silicide reaction is described.",

author = "Bennett, {P. A.} and Parikh, {S. A.} and Lee, {M. Y.} and Cahill, {David G.}",

note = "Funding Information: This work was supportedb y the National Science Foundation under grant No. DMR9221201, and also in part by the T.J. Watson Research Center during a sabbaticalle aveby P.A.B. It is a pleasure to thank J. Demuth and R. Tromp for many useful discussions.",

year = "1994",

month = jun,

day = "10",

doi = "10.1016/0039-6028(94)90729-3",

language = "English (US)",

volume = "312",

pages = "377--386",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Atomic structure of cobalt silicide islands formed by reactive epitaxy

AU - Bennett, P. A.

AU - Parikh, S. A.

AU - Lee, M. Y.

AU - Cahill, David G.

N1 - Funding Information: This work was supportedb y the National Science Foundation under grant No. DMR9221201, and also in part by the T.J. Watson Research Center during a sabbaticalle aveby P.A.B. It is a pleasure to thank J. Demuth and R. Tromp for many useful discussions.

PY - 1994/6/10

Y1 - 1994/6/10

N2 - We report STM observations of the reaction of cobalt deposited on Si(111) at 320°C. At low coverage, coherent monolayer silicide islands form in a matrix of 7 × 7 reconstructed silicon. The islands take one of three forms: flat and recessed 0.3 Å, 2 × 2 corrugated and raised 0.8 Å or flat and raised 1.0 Å, where heights are given with respect to Si(111)-7 × 7. These structures are assigned to CoSi2(111) with 7-fold (111) interface bonding, CoSi2 with a 2 × 2 array of Si adatoms, and CoSi(111), respectively. Atomic models are given for the lateral silicide-silicon interface along the island edges. The role of these metastable, precursor structures in the kinetic path of the silicide reaction is described.

AB - We report STM observations of the reaction of cobalt deposited on Si(111) at 320°C. At low coverage, coherent monolayer silicide islands form in a matrix of 7 × 7 reconstructed silicon. The islands take one of three forms: flat and recessed 0.3 Å, 2 × 2 corrugated and raised 0.8 Å or flat and raised 1.0 Å, where heights are given with respect to Si(111)-7 × 7. These structures are assigned to CoSi2(111) with 7-fold (111) interface bonding, CoSi2 with a 2 × 2 array of Si adatoms, and CoSi(111), respectively. Atomic models are given for the lateral silicide-silicon interface along the island edges. The role of these metastable, precursor structures in the kinetic path of the silicide reaction is described.

UR - http://www.scopus.com/inward/record.url?scp=0028443636&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028443636&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(94)90729-3

DO - 10.1016/0039-6028(94)90729-3

M3 - Article

AN - SCOPUS:0028443636

SN - 0039-6028

VL - 312

SP - 377

EP - 386

JO - Surface Science

JF - Surface Science

IS - 3

ER -

Atomic structure of cobalt silicide islands formed by reactive epitaxy

Abstract

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