Abstract

Focused ion beams provide a means of nanometer-scale manufacturing and material processing, which is used for applications such as forming nanometer-scale pores in thin films for DNA sequencing. We investigate such a configuration with Ga+ bombardment of a Si thin-film target using molecular dynamics simulation. For a range of ion intensities in a realistic configuration, a recirculating melt region develops, which is seen to flow with a symmetrical pattern, counter to how it would flow were it driven by the ion momentum flux. Such flow is potentially important for the shape and composition of the formed structures. Relevant stress scales and estimated physical properties of silicon under these extreme conditions support the importance thermocapillary effects. A flow model with Marangoni forcing, based upon the temperature gradient and geometry from the atomistic simulation, indeed reproduces the flow and thus could be used to anticipate such flows and their influence in applications.

Original languageEnglish (US)
Article number052003
JournalPhysics of fluids
Volume27
Issue number5
DOIs
StatePublished - May 12 2015

ASJC Scopus subject areas

  • Computational Mechanics
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Fluid Flow and Transfer Processes

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