Atomic-scale study of scattering and electronic properties of CVD graphene grain boundaries

Justin C. Koepke, Joshua D. Wood, David Estrada, Zhun Yong Ong, Feng Xiong, Eric Pop, Joseph W. Lyding

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Chemical vapor deposition growth of graphene on polycrystalline copper foil is a demonstrated technique for obtaining large-area, predominantly monolayer graphene. However, such growth results in grain boundaries between rotationally misoriented graphene grains. We employ scanning tunneling microscopy and spectroscopy to examine the electronic properties of grain boundaries (GBs) and scattering off them in polycrystalline graphene grown by chemical vapor deposition on Cu foil and transferred to SiO2 substrates. Spectroscopy shows enhanced empty states tunneling conductance for most of the GBs and a shift towards more n-type doping compared to the bulk of the graphene. Fourier analysis of the electronic superstructure patterns adjacent to GBs indicates that backscattering and intervalley scattering are the dominant mechanisms, leading to the mobility reduction in the presence of GBs in CVD-grown graphene

Original languageEnglish (US)
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
StatePublished - 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: Aug 20 2012Aug 23 2012

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Country/TerritoryUnited Kingdom
CityBirmingham
Period8/20/128/23/12

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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