Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM

Peter M. Albrecht, Joseph W Lyding

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The ultrahigh vacuum scanning tunneling microscope (UHV-STM) is used to investigate the electrical and structural properties of single-walled carbon nanotubes (SWNTs) supported on both clean and hydrogen-terminated Si(100) surfaces. Dry contact transfer (DCT) of SWNTs in situ precludes contamination of the SWNT/Si interface and enables sensitive atomic-scale measurements. Tunneling current-voltage (I-V) and conductance-voltage (dI/dV-V) spectra have been acquired from both semiconducting and metallic SWNTs. The compatibility of SWNTs with STM nanofabrication on the Si(100)-2×1:H surface is exemplified by the integration of H-resist nanolithography with adsorbed SWNTs. Contrary to earlier UHV-STM studies of SWNTs on Au(111), the motivation for our work is derived from the technological importance of the Si(100) substrate and the development of hybrid SWNT-Si nanoelectronic devices.

Original languageEnglish (US)
Title of host publication2005 IEEE Workshop on Microelectronics and Electron Devices, WMED
Pages49-52
Number of pages4
DOIs
StatePublished - Dec 1 2005
Event2005 IEEE Workshop on Microelectronics and Electron Devices, WMED - Boise, ID, United States
Duration: Apr 15 2005Apr 15 2005

Publication series

Name2005 IEEE Workshop on Microelectronics and Electron Devices, WMED
Volume2005

Other

Other2005 IEEE Workshop on Microelectronics and Electron Devices, WMED
CountryUnited States
CityBoise, ID
Period4/15/054/15/05

Fingerprint

Ultrahigh vacuum
Single-walled carbon nanotubes (SWCN)
Carbon nanotubes
Microscopes
Scanning
Silicon
Nanolithography
Nanoelectronics
Electric potential
Nanotechnology
Structural properties
Electric properties
Contamination
Hydrogen
Substrates

Keywords

  • Carbon nanotubes
  • Molecular electronics
  • Nanofabrication
  • Scanning tunneling microscopy
  • Scanning tunneling spectroscopy
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Albrecht, P. M., & Lyding, J. W. (2005). Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM. In 2005 IEEE Workshop on Microelectronics and Electron Devices, WMED (pp. 49-52). [1431615] (2005 IEEE Workshop on Microelectronics and Electron Devices, WMED; Vol. 2005). https://doi.org/10.1109/WMED.2005.1431615

Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM. / Albrecht, Peter M.; Lyding, Joseph W.

2005 IEEE Workshop on Microelectronics and Electron Devices, WMED. 2005. p. 49-52 1431615 (2005 IEEE Workshop on Microelectronics and Electron Devices, WMED; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Albrecht, PM & Lyding, JW 2005, Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM. in 2005 IEEE Workshop on Microelectronics and Electron Devices, WMED., 1431615, 2005 IEEE Workshop on Microelectronics and Electron Devices, WMED, vol. 2005, pp. 49-52, 2005 IEEE Workshop on Microelectronics and Electron Devices, WMED, Boise, ID, United States, 4/15/05. https://doi.org/10.1109/WMED.2005.1431615
Albrecht PM, Lyding JW. Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM. In 2005 IEEE Workshop on Microelectronics and Electron Devices, WMED. 2005. p. 49-52. 1431615. (2005 IEEE Workshop on Microelectronics and Electron Devices, WMED). https://doi.org/10.1109/WMED.2005.1431615
Albrecht, Peter M. ; Lyding, Joseph W. / Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM. 2005 IEEE Workshop on Microelectronics and Electron Devices, WMED. 2005. pp. 49-52 (2005 IEEE Workshop on Microelectronics and Electron Devices, WMED).
@inproceedings{8978af957c794528931e8e945ceed6ce,
title = "Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM",
abstract = "The ultrahigh vacuum scanning tunneling microscope (UHV-STM) is used to investigate the electrical and structural properties of single-walled carbon nanotubes (SWNTs) supported on both clean and hydrogen-terminated Si(100) surfaces. Dry contact transfer (DCT) of SWNTs in situ precludes contamination of the SWNT/Si interface and enables sensitive atomic-scale measurements. Tunneling current-voltage (I-V) and conductance-voltage (dI/dV-V) spectra have been acquired from both semiconducting and metallic SWNTs. The compatibility of SWNTs with STM nanofabrication on the Si(100)-2×1:H surface is exemplified by the integration of H-resist nanolithography with adsorbed SWNTs. Contrary to earlier UHV-STM studies of SWNTs on Au(111), the motivation for our work is derived from the technological importance of the Si(100) substrate and the development of hybrid SWNT-Si nanoelectronic devices.",
keywords = "Carbon nanotubes, Molecular electronics, Nanofabrication, Scanning tunneling microscopy, Scanning tunneling spectroscopy, Silicon",
author = "Albrecht, {Peter M.} and Lyding, {Joseph W}",
year = "2005",
month = "12",
day = "1",
doi = "10.1109/WMED.2005.1431615",
language = "English (US)",
isbn = "0780390725",
series = "2005 IEEE Workshop on Microelectronics and Electron Devices, WMED",
pages = "49--52",
booktitle = "2005 IEEE Workshop on Microelectronics and Electron Devices, WMED",

}

TY - GEN

T1 - Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM

AU - Albrecht, Peter M.

AU - Lyding, Joseph W

PY - 2005/12/1

Y1 - 2005/12/1

N2 - The ultrahigh vacuum scanning tunneling microscope (UHV-STM) is used to investigate the electrical and structural properties of single-walled carbon nanotubes (SWNTs) supported on both clean and hydrogen-terminated Si(100) surfaces. Dry contact transfer (DCT) of SWNTs in situ precludes contamination of the SWNT/Si interface and enables sensitive atomic-scale measurements. Tunneling current-voltage (I-V) and conductance-voltage (dI/dV-V) spectra have been acquired from both semiconducting and metallic SWNTs. The compatibility of SWNTs with STM nanofabrication on the Si(100)-2×1:H surface is exemplified by the integration of H-resist nanolithography with adsorbed SWNTs. Contrary to earlier UHV-STM studies of SWNTs on Au(111), the motivation for our work is derived from the technological importance of the Si(100) substrate and the development of hybrid SWNT-Si nanoelectronic devices.

AB - The ultrahigh vacuum scanning tunneling microscope (UHV-STM) is used to investigate the electrical and structural properties of single-walled carbon nanotubes (SWNTs) supported on both clean and hydrogen-terminated Si(100) surfaces. Dry contact transfer (DCT) of SWNTs in situ precludes contamination of the SWNT/Si interface and enables sensitive atomic-scale measurements. Tunneling current-voltage (I-V) and conductance-voltage (dI/dV-V) spectra have been acquired from both semiconducting and metallic SWNTs. The compatibility of SWNTs with STM nanofabrication on the Si(100)-2×1:H surface is exemplified by the integration of H-resist nanolithography with adsorbed SWNTs. Contrary to earlier UHV-STM studies of SWNTs on Au(111), the motivation for our work is derived from the technological importance of the Si(100) substrate and the development of hybrid SWNT-Si nanoelectronic devices.

KW - Carbon nanotubes

KW - Molecular electronics

KW - Nanofabrication

KW - Scanning tunneling microscopy

KW - Scanning tunneling spectroscopy

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=33744479202&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33744479202&partnerID=8YFLogxK

U2 - 10.1109/WMED.2005.1431615

DO - 10.1109/WMED.2005.1431615

M3 - Conference contribution

SN - 0780390725

SN - 9780780390720

T3 - 2005 IEEE Workshop on Microelectronics and Electron Devices, WMED

SP - 49

EP - 52

BT - 2005 IEEE Workshop on Microelectronics and Electron Devices, WMED

ER -