@inproceedings{8978af957c794528931e8e945ceed6ce,
title = "Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM",
abstract = "The ultrahigh vacuum scanning tunneling microscope (UHV-STM) is used to investigate the electrical and structural properties of single-walled carbon nanotubes (SWNTs) supported on both clean and hydrogen-terminated Si(100) surfaces. Dry contact transfer (DCT) of SWNTs in situ precludes contamination of the SWNT/Si interface and enables sensitive atomic-scale measurements. Tunneling current-voltage (I-V) and conductance-voltage (dI/dV-V) spectra have been acquired from both semiconducting and metallic SWNTs. The compatibility of SWNTs with STM nanofabrication on the Si(100)-2×1:H surface is exemplified by the integration of H-resist nanolithography with adsorbed SWNTs. Contrary to earlier UHV-STM studies of SWNTs on Au(111), the motivation for our work is derived from the technological importance of the Si(100) substrate and the development of hybrid SWNT-Si nanoelectronic devices.",
keywords = "Carbon nanotubes, Molecular electronics, Nanofabrication, Scanning tunneling microscopy, Scanning tunneling spectroscopy, Silicon",
author = "Albrecht, {Peter M.} and Lyding, {Joseph W.}",
year = "2005",
doi = "10.1109/WMED.2005.1431615",
language = "English (US)",
isbn = "0780390725",
series = "2005 IEEE Workshop on Microelectronics and Electron Devices, WMED",
pages = "49--52",
booktitle = "2005 IEEE Workshop on Microelectronics and Electron Devices, WMED",
note = "2005 IEEE Workshop on Microelectronics and Electron Devices, WMED ; Conference date: 15-04-2005 Through 15-04-2005",
}