Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM

Peter M. Albrecht, Joseph W. Lyding

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The ultrahigh vacuum scanning tunneling microscope (UHV-STM) is used to investigate the electrical and structural properties of single-walled carbon nanotubes (SWNTs) supported on both clean and hydrogen-terminated Si(100) surfaces. Dry contact transfer (DCT) of SWNTs in situ precludes contamination of the SWNT/Si interface and enables sensitive atomic-scale measurements. Tunneling current-voltage (I-V) and conductance-voltage (dI/dV-V) spectra have been acquired from both semiconducting and metallic SWNTs. The compatibility of SWNTs with STM nanofabrication on the Si(100)-2×1:H surface is exemplified by the integration of H-resist nanolithography with adsorbed SWNTs. Contrary to earlier UHV-STM studies of SWNTs on Au(111), the motivation for our work is derived from the technological importance of the Si(100) substrate and the development of hybrid SWNT-Si nanoelectronic devices.

Original languageEnglish (US)
Title of host publication2005 IEEE Workshop on Microelectronics and Electron Devices, WMED
Pages49-52
Number of pages4
DOIs
StatePublished - 2005
Event2005 IEEE Workshop on Microelectronics and Electron Devices, WMED - Boise, ID, United States
Duration: Apr 15 2005Apr 15 2005

Publication series

Name2005 IEEE Workshop on Microelectronics and Electron Devices, WMED
Volume2005

Other

Other2005 IEEE Workshop on Microelectronics and Electron Devices, WMED
Country/TerritoryUnited States
CityBoise, ID
Period4/15/054/15/05

Keywords

  • Carbon nanotubes
  • Molecular electronics
  • Nanofabrication
  • Scanning tunneling microscopy
  • Scanning tunneling spectroscopy
  • Silicon

ASJC Scopus subject areas

  • General Engineering

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