Atomic-scale desorption through electronic and vibrational excitation mechanisms

T. C. Shen, C. Wang, G. C. Abeln, J. R. Tucker, Joseph W Lyding, Ph Avouris, R. E. Walkup

Research output: Contribution to journalArticle

Abstract

The scanning tunneling microscope has been used to desorb hydrogen from hydrogen-terminated silicon (100) surfaces. As a result of control of the dose of incident electrons, a countable number of desorption sites can be created and the yield and cross section are thereby obtained. Two distinct desorption mechanisms are observed: (i) direct electronic excitation of the Si-H bond by field-emitted electrons and (ii) an atomic resolution mechanism that involves multiple-vibrational excitation by tunneling electrons at low applied voltages. This vibrational heating effect offers significant potential for controlling surface reactions involving adsorbed individual atoms and molecules.

Original languageEnglish (US)
Pages (from-to)1590-1592
Number of pages3
JournalScience
Volume268
Issue number5217
DOIs
StatePublished - Jan 1 1995

Fingerprint

Electrons
Hydrogen
Silicon
Heating

ASJC Scopus subject areas

  • General

Cite this

Shen, T. C., Wang, C., Abeln, G. C., Tucker, J. R., Lyding, J. W., Avouris, P., & Walkup, R. E. (1995). Atomic-scale desorption through electronic and vibrational excitation mechanisms. Science, 268(5217), 1590-1592. https://doi.org/10.1126/science.268.5217.1590

Atomic-scale desorption through electronic and vibrational excitation mechanisms. / Shen, T. C.; Wang, C.; Abeln, G. C.; Tucker, J. R.; Lyding, Joseph W; Avouris, Ph; Walkup, R. E.

In: Science, Vol. 268, No. 5217, 01.01.1995, p. 1590-1592.

Research output: Contribution to journalArticle

Shen, TC, Wang, C, Abeln, GC, Tucker, JR, Lyding, JW, Avouris, P & Walkup, RE 1995, 'Atomic-scale desorption through electronic and vibrational excitation mechanisms', Science, vol. 268, no. 5217, pp. 1590-1592. https://doi.org/10.1126/science.268.5217.1590
Shen, T. C. ; Wang, C. ; Abeln, G. C. ; Tucker, J. R. ; Lyding, Joseph W ; Avouris, Ph ; Walkup, R. E. / Atomic-scale desorption through electronic and vibrational excitation mechanisms. In: Science. 1995 ; Vol. 268, No. 5217. pp. 1590-1592.
@article{24f1ea50a04a41638c88fed5d3b46974,
title = "Atomic-scale desorption through electronic and vibrational excitation mechanisms",
abstract = "The scanning tunneling microscope has been used to desorb hydrogen from hydrogen-terminated silicon (100) surfaces. As a result of control of the dose of incident electrons, a countable number of desorption sites can be created and the yield and cross section are thereby obtained. Two distinct desorption mechanisms are observed: (i) direct electronic excitation of the Si-H bond by field-emitted electrons and (ii) an atomic resolution mechanism that involves multiple-vibrational excitation by tunneling electrons at low applied voltages. This vibrational heating effect offers significant potential for controlling surface reactions involving adsorbed individual atoms and molecules.",
author = "Shen, {T. C.} and C. Wang and Abeln, {G. C.} and Tucker, {J. R.} and Lyding, {Joseph W} and Ph Avouris and Walkup, {R. E.}",
year = "1995",
month = "1",
day = "1",
doi = "10.1126/science.268.5217.1590",
language = "English (US)",
volume = "268",
pages = "1590--1592",
journal = "Science",
issn = "0036-8075",
publisher = "American Association for the Advancement of Science",
number = "5217",

}

TY - JOUR

T1 - Atomic-scale desorption through electronic and vibrational excitation mechanisms

AU - Shen, T. C.

AU - Wang, C.

AU - Abeln, G. C.

AU - Tucker, J. R.

AU - Lyding, Joseph W

AU - Avouris, Ph

AU - Walkup, R. E.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The scanning tunneling microscope has been used to desorb hydrogen from hydrogen-terminated silicon (100) surfaces. As a result of control of the dose of incident electrons, a countable number of desorption sites can be created and the yield and cross section are thereby obtained. Two distinct desorption mechanisms are observed: (i) direct electronic excitation of the Si-H bond by field-emitted electrons and (ii) an atomic resolution mechanism that involves multiple-vibrational excitation by tunneling electrons at low applied voltages. This vibrational heating effect offers significant potential for controlling surface reactions involving adsorbed individual atoms and molecules.

AB - The scanning tunneling microscope has been used to desorb hydrogen from hydrogen-terminated silicon (100) surfaces. As a result of control of the dose of incident electrons, a countable number of desorption sites can be created and the yield and cross section are thereby obtained. Two distinct desorption mechanisms are observed: (i) direct electronic excitation of the Si-H bond by field-emitted electrons and (ii) an atomic resolution mechanism that involves multiple-vibrational excitation by tunneling electrons at low applied voltages. This vibrational heating effect offers significant potential for controlling surface reactions involving adsorbed individual atoms and molecules.

UR - http://www.scopus.com/inward/record.url?scp=0001446932&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001446932&partnerID=8YFLogxK

U2 - 10.1126/science.268.5217.1590

DO - 10.1126/science.268.5217.1590

M3 - Article

C2 - 17754609

AN - SCOPUS:0001446932

VL - 268

SP - 1590

EP - 1592

JO - Science

JF - Science

SN - 0036-8075

IS - 5217

ER -