Atomic-scale characterization of single-walled carbon nanotubes on Si(100)-2 × 1:H with the ultrahigh vacuum scanning tunneling microscope

Keyphrases

• Si(111) 100%
• Ultra-high Vacuum 100%
• Multi-walled Carbon Nanotubes (MWCNTs) 100%
• Nanotubes 100%
• Scanning Tunneling Microscope 100%
• Atomic-scale Characterization 100%
• Scanning Tunneling Microscopy 50%
• Band Gap 50%
• In Situ 50%
• Nanometer Scale 50%
• Room Temperature 50%
• Electronic Properties 50%
• Atomic Scale 50%
• Semiconducting Nanotubes 50%
• Passivated 50%
• Si Substrate 50%
• Scanning Tunneling Spectroscopy 50%
• H-surfaces 50%
• Si(100) Surface 50%
• Deposition Process 50%
• Pattern-based Approach 50%
• Hydrogen Desorption 50%
• Chemical Processing 50%
• Corrugation 50%
• Electron Stimulated Desorption 50%
• Electronic Characteristics 50%
• Local Enhancement 50%
• Electron Current 50%
• Dry Deposition 50%
• Si Dangling Bonds 50%
• Topographic Properties 50%

Material Science

• Nanotube 100%
• Carbon Nanotube 100%
• Surface (Surface Science) 66%
• Scanning Tunneling Microscopy 66%
• Electronic Property 33%
• Desorption 33%
• Chemical Processing 33%