Atomic-scale characterization of single-walled carbon nanotubes on Si(100)-2 × 1:H with the ultrahigh vacuum scanning tunneling microscope

The atomic-scale topographic and electronic properties of single-walled carbon nanotubes adsorbed onto H-passivated Si(100) surfaces are elucidated by ultrahigh vacuum scanning tunneling microscopy and spectroscopy performed at room temperature. An in situ dry deposition process results in the pristine transfer of predominantly isolated nanotubes to the Si(100)-2 × 1:H surface and circumvents the need for ambient chemical processing. Electronic features corresponding to a semiconducting nanotube are identified within the band gap of the Si substrate. Nanometer-scale delineation of reactive Si dangling bonds by electron stimulated desorption of hydrogen is observed to result in a local enhancement of the apparent atomic corrugation for a nanotube intercepting the trajectory of the electron current used in the patterning process.