Atomic-scale characterization of single-walled carbon nanotubes on Si(100)-2 × 1:H with the ultrahigh vacuum scanning tunneling microscope

P. M. Albrecht, J. W. Lyding

Research output: Contribution to journalArticle

Abstract

The atomic-scale topographic and electronic properties of single-walled carbon nanotubes adsorbed onto H-passivated Si(100) surfaces are elucidated by ultrahigh vacuum scanning tunneling microscopy and spectroscopy performed at room temperature. An in situ dry deposition process results in the pristine transfer of predominantly isolated nanotubes to the Si(100)-2 × 1:H surface and circumvents the need for ambient chemical processing. Electronic features corresponding to a semiconducting nanotube are identified within the band gap of the Si substrate. Nanometer-scale delineation of reactive Si dangling bonds by electron stimulated desorption of hydrogen is observed to result in a local enhancement of the apparent atomic corrugation for a nanotube intercepting the trajectory of the electron current used in the patterning process.

Original languageEnglish (US)
Pages (from-to)407-412
Number of pages6
JournalSuperlattices and Microstructures
Volume34
Issue number3-6
DOIs
StatePublished - Sep 1 2003

Fingerprint

Ultrahigh vacuum
Single-walled carbon nanotubes (SWCN)
Nanotubes
ultrahigh vacuum
nanotubes
Microscopes
carbon nanotubes
microscopes
Scanning
scanning
Dangling bonds
delineation
Electrons
Scanning tunneling microscopy
electronics
Electronic properties
scanning tunneling microscopy
Hydrogen
Desorption
Energy gap

Keywords

  • Carbon nanotubes
  • Fullerenes
  • Nanofabrication
  • Scanning tunneling microscopy
  • Scanning tunneling spectroscopy
  • Silicon
  • Ultrahigh vacuum

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "The atomic-scale topographic and electronic properties of single-walled carbon nanotubes adsorbed onto H-passivated Si(100) surfaces are elucidated by ultrahigh vacuum scanning tunneling microscopy and spectroscopy performed at room temperature. An in situ dry deposition process results in the pristine transfer of predominantly isolated nanotubes to the Si(100)-2 × 1:H surface and circumvents the need for ambient chemical processing. Electronic features corresponding to a semiconducting nanotube are identified within the band gap of the Si substrate. Nanometer-scale delineation of reactive Si dangling bonds by electron stimulated desorption of hydrogen is observed to result in a local enhancement of the apparent atomic corrugation for a nanotube intercepting the trajectory of the electron current used in the patterning process.",
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N2 - The atomic-scale topographic and electronic properties of single-walled carbon nanotubes adsorbed onto H-passivated Si(100) surfaces are elucidated by ultrahigh vacuum scanning tunneling microscopy and spectroscopy performed at room temperature. An in situ dry deposition process results in the pristine transfer of predominantly isolated nanotubes to the Si(100)-2 × 1:H surface and circumvents the need for ambient chemical processing. Electronic features corresponding to a semiconducting nanotube are identified within the band gap of the Si substrate. Nanometer-scale delineation of reactive Si dangling bonds by electron stimulated desorption of hydrogen is observed to result in a local enhancement of the apparent atomic corrugation for a nanotube intercepting the trajectory of the electron current used in the patterning process.

AB - The atomic-scale topographic and electronic properties of single-walled carbon nanotubes adsorbed onto H-passivated Si(100) surfaces are elucidated by ultrahigh vacuum scanning tunneling microscopy and spectroscopy performed at room temperature. An in situ dry deposition process results in the pristine transfer of predominantly isolated nanotubes to the Si(100)-2 × 1:H surface and circumvents the need for ambient chemical processing. Electronic features corresponding to a semiconducting nanotube are identified within the band gap of the Si substrate. Nanometer-scale delineation of reactive Si dangling bonds by electron stimulated desorption of hydrogen is observed to result in a local enhancement of the apparent atomic corrugation for a nanotube intercepting the trajectory of the electron current used in the patterning process.

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