Atomic resolution scanning tunneling microscope study of single-walled carbon nanotubes on GaAs(110)

L. B. Ruppalt, P. M. Albrecht, Joseph W Lyding

Research output: Contribution to journalArticle

Abstract

The single-walled carbon nanotubes (SWNT) on the cleaved GsAs(110) surface were studied. The study was carried out by using an ultrahigh vacuum (UHV) scanning tunnelling microscopes (STM). A clean transfer of SWNTs from the applicator to the substrate, with the little evidence of undesirable contamination, and nanotubes and surface exhibit no indication of disruption due to deposition process was found. The results show that the SWNTs were transferred to the GaAs surface with minimal additional contamination and no indication off damage to either nanotubes or substrate.

Original languageEnglish (US)
Pages (from-to)2005-2007
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number4
DOIs
StatePublished - Jul 1 2004

Fingerprint

Single-walled carbon nanotubes (SWCN)
Microscopes
carbon nanotubes
microscopes
Scanning
Nanotubes
scanning
nanotubes
indication
contamination
Contamination
Applicators
Ultrahigh vacuum
Substrates
ultrahigh vacuum
damage

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{39dbe36b125d4294975eff7e77e71566,
title = "Atomic resolution scanning tunneling microscope study of single-walled carbon nanotubes on GaAs(110)",
abstract = "The single-walled carbon nanotubes (SWNT) on the cleaved GsAs(110) surface were studied. The study was carried out by using an ultrahigh vacuum (UHV) scanning tunnelling microscopes (STM). A clean transfer of SWNTs from the applicator to the substrate, with the little evidence of undesirable contamination, and nanotubes and surface exhibit no indication of disruption due to deposition process was found. The results show that the SWNTs were transferred to the GaAs surface with minimal additional contamination and no indication off damage to either nanotubes or substrate.",
author = "Ruppalt, {L. B.} and Albrecht, {P. M.} and Lyding, {Joseph W}",
year = "2004",
month = "7",
day = "1",
doi = "10.1116/1.1768192",
language = "English (US)",
volume = "22",
pages = "2005--2007",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Atomic resolution scanning tunneling microscope study of single-walled carbon nanotubes on GaAs(110)

AU - Ruppalt, L. B.

AU - Albrecht, P. M.

AU - Lyding, Joseph W

PY - 2004/7/1

Y1 - 2004/7/1

N2 - The single-walled carbon nanotubes (SWNT) on the cleaved GsAs(110) surface were studied. The study was carried out by using an ultrahigh vacuum (UHV) scanning tunnelling microscopes (STM). A clean transfer of SWNTs from the applicator to the substrate, with the little evidence of undesirable contamination, and nanotubes and surface exhibit no indication of disruption due to deposition process was found. The results show that the SWNTs were transferred to the GaAs surface with minimal additional contamination and no indication off damage to either nanotubes or substrate.

AB - The single-walled carbon nanotubes (SWNT) on the cleaved GsAs(110) surface were studied. The study was carried out by using an ultrahigh vacuum (UHV) scanning tunnelling microscopes (STM). A clean transfer of SWNTs from the applicator to the substrate, with the little evidence of undesirable contamination, and nanotubes and surface exhibit no indication of disruption due to deposition process was found. The results show that the SWNTs were transferred to the GaAs surface with minimal additional contamination and no indication off damage to either nanotubes or substrate.

UR - http://www.scopus.com/inward/record.url?scp=4944254600&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944254600&partnerID=8YFLogxK

U2 - 10.1116/1.1768192

DO - 10.1116/1.1768192

M3 - Article

AN - SCOPUS:4944254600

VL - 22

SP - 2005

EP - 2007

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 4

ER -