Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study

Honggyu Kim; Yifei Meng; Jean Luc Rouviére; Dieter Isheim; David N. Seidman; Jian Min Zuo

doi:10.1063/1.4794193

Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study

Honggyu Kim, Yifei Meng, Jean Luc Rouviére, Dieter Isheim, David N. Seidman, Jian Min Zuo

Research output: Contribution to journal › Article › peer-review

Abstract

We combine quantitative analyses of Z-contrast images with composition analyses employing atom probe tomography (APT) correlatively to provide a quantitative measurement of atomic scale interfacial intermixing in an InAs/GaSb superlattice (SL). Contributions from GaSb and InAs in the Z-contrast images are separated using an improved image processing technique. Correlation with high resolution APT composition analyses permits an examination of interfacial segregation of both cations and anions and their incorporation in the short period InAs/GaSb SL. Results revealed short, intermediate, and long-range intermixing of In, Ga, and Sb during molecular beam epitaxial growth and their distribution in the SL.

Original language	English (US)
Article number	103511
Journal	Journal of Applied Physics
Volume	113
Issue number	10
DOIs	https://doi.org/10.1063/1.4794193
State	Published - Mar 14 2013

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4794193

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title = "Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study",

abstract = "We combine quantitative analyses of Z-contrast images with composition analyses employing atom probe tomography (APT) correlatively to provide a quantitative measurement of atomic scale interfacial intermixing in an InAs/GaSb superlattice (SL). Contributions from GaSb and InAs in the Z-contrast images are separated using an improved image processing technique. Correlation with high resolution APT composition analyses permits an examination of interfacial segregation of both cations and anions and their incorporation in the short period InAs/GaSb SL. Results revealed short, intermediate, and long-range intermixing of In, Ga, and Sb during molecular beam epitaxial growth and their distribution in the SL.",

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T1 - Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices

T2 - A correlative study

AU - Kim, Honggyu

AU - Meng, Yifei

AU - Rouviére, Jean Luc

AU - Isheim, Dieter

AU - Seidman, David N.

AU - Zuo, Jian Min

PY - 2013/3/14

Y1 - 2013/3/14

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