Atomic precision patterning on Si

An opportunity for a digitized process

J. N. Randall, J. B. Ballard, Joseph W Lyding, S. Schmucker, J. R. Von Ehr, R. Saini, H. Xu, Y. Ding

Research output: Contribution to journalArticle

Abstract

H depassivation lithography is a process by which a monolayer of H absorbed on a Si(1 0 0) 2 × 1 surface may be patterned by the removal of H atoms using a scanning tunneling microscope. This process can achieve atomic resolution where individual atoms are targeted and removed. This paper suggests that such a patterning process can be carried out as a digital process, where the pixels of the pattern are the individual H atoms. The goal is digital fabrication rather than digital information processing. The margins for the read and write operators appear to be sufficient for a digital process, and the tolerance for physical addressing of the atoms is technologically feasible. A digital fabrication process would enjoy some of the same advantages of digital computation; namely high reliability, error checking and correction, and the creation of complex systems.

Original languageEnglish (US)
Pages (from-to)955-958
Number of pages4
JournalMicroelectronic Engineering
Volume87
Issue number5-8
DOIs
StatePublished - May 1 2010

Fingerprint

Atoms
atoms
Fabrication
fabrication
complex systems
Lithography
Large scale systems
margins
Monolayers
Microscopes
lithography
Pixels
pixels
microscopes
Scanning
operators
scanning

Keywords

  • Digital process
  • Hydrogen depassivation
  • Lithography
  • Scanning tunneling microscope
  • Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Randall, J. N., Ballard, J. B., Lyding, J. W., Schmucker, S., Von Ehr, J. R., Saini, R., ... Ding, Y. (2010). Atomic precision patterning on Si: An opportunity for a digitized process. Microelectronic Engineering, 87(5-8), 955-958. https://doi.org/10.1016/j.mee.2009.11.143

Atomic precision patterning on Si : An opportunity for a digitized process. / Randall, J. N.; Ballard, J. B.; Lyding, Joseph W; Schmucker, S.; Von Ehr, J. R.; Saini, R.; Xu, H.; Ding, Y.

In: Microelectronic Engineering, Vol. 87, No. 5-8, 01.05.2010, p. 955-958.

Research output: Contribution to journalArticle

Randall, JN, Ballard, JB, Lyding, JW, Schmucker, S, Von Ehr, JR, Saini, R, Xu, H & Ding, Y 2010, 'Atomic precision patterning on Si: An opportunity for a digitized process', Microelectronic Engineering, vol. 87, no. 5-8, pp. 955-958. https://doi.org/10.1016/j.mee.2009.11.143
Randall, J. N. ; Ballard, J. B. ; Lyding, Joseph W ; Schmucker, S. ; Von Ehr, J. R. ; Saini, R. ; Xu, H. ; Ding, Y. / Atomic precision patterning on Si : An opportunity for a digitized process. In: Microelectronic Engineering. 2010 ; Vol. 87, No. 5-8. pp. 955-958.
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