Atomic precision patterning on Si: An opportunity for a digitized process

J. N. Randall, J. B. Ballard, J. W. Lyding, S. Schmucker, J. R. Von Ehr, R. Saini, H. Xu, Y. Ding

Research output: Contribution to journalArticle

Abstract

H depassivation lithography is a process by which a monolayer of H absorbed on a Si(1 0 0) 2 × 1 surface may be patterned by the removal of H atoms using a scanning tunneling microscope. This process can achieve atomic resolution where individual atoms are targeted and removed. This paper suggests that such a patterning process can be carried out as a digital process, where the pixels of the pattern are the individual H atoms. The goal is digital fabrication rather than digital information processing. The margins for the read and write operators appear to be sufficient for a digital process, and the tolerance for physical addressing of the atoms is technologically feasible. A digital fabrication process would enjoy some of the same advantages of digital computation; namely high reliability, error checking and correction, and the creation of complex systems.

Original languageEnglish (US)
Pages (from-to)955-958
Number of pages4
JournalMicroelectronic Engineering
Volume87
Issue number5-8
DOIs
StatePublished - May 1 2010

Keywords

  • Digital process
  • Hydrogen depassivation
  • Lithography
  • Scanning tunneling microscope
  • Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Cite this

    Randall, J. N., Ballard, J. B., Lyding, J. W., Schmucker, S., Von Ehr, J. R., Saini, R., Xu, H., & Ding, Y. (2010). Atomic precision patterning on Si: An opportunity for a digitized process. Microelectronic Engineering, 87(5-8), 955-958. https://doi.org/10.1016/j.mee.2009.11.143