Atomic-layer fabrication of high-Tc tunnel junctions

Research output: Contribution to journalArticlepeer-review

Abstract

Using ALL-MBE, we have engineered a novel, metastable cuprate superconductor, BiSr2Ca7-xDyxCu8O19+y' in which only the central Ca layer is doped by Dy. This provides, within a single unit cell, the bottom superconducting electrode, an insulating barrier layer (only few Å thick), and the top superconducting electrode, thus constituting an artificial intra-cell Josephson junction. In this way, we have fabricated the first high-Tc tunnel (SIS) junctions. They exhibit very sharp quasiparticle tunneling I-V characteristics, consistent with tunneling between 2D superconductors with d-wave pairing.

Original languageEnglish (US)
Pages (from-to)201-205
Number of pages5
JournalJournal of Alloys and Compounds
Volume251
Issue number1-2
DOIs
StatePublished - Apr 1997
Externally publishedYes

Keywords

  • Atomic-layer fabrication
  • High-T tunnel junctions

ASJC Scopus subject areas

  • Metals and Alloys

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