Atomic-layer-controlled fabrication of high-Tc superconductive electronic devices

Ivan Bozovic, J. N. Eckstein, G. F. Virshup

Research output: Contribution to journalConference articlepeer-review


We have used atomic layer-by-layer epitaxy to deposit HTSC thin films with atomically flat surfaces and interfaces. The samples are engineered by stacking molecular layers of different compounds, by adding or omitting atomic monolayers, and by doping within specified monolayers. Novel artificial HTSC compounds such as BiSr2Ca7Cu8Ox (1278), as well as various heterostructures have been synthesized in this way. This unique synthetic capability allowed several fundamental physics issues, such as the dimensionality of the HTSC state, long-range proximity effects, resonant tunneling with a specified number of hops, etc., to be resolved. In addition, state-of-the-art trilayer Josephson junctions with IcRn> 5 mV have been fabricated. Finally, the possibility of making SIS junctions using SrTiO3 barriers of thickness down to 4angstrom is assessed.

Original languageEnglish (US)
Pages (from-to)117-120
Number of pages4
JournalDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Issue number6
StatePublished - Dec 1 1994
Externally publishedYes
EventProceedings of ETL Workshop on High Temperature Superconductors - Tsukuba, Jpn
Duration: Dec 6 1993Dec 8 1993

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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