Atomic force microscopy studies of self-assembled Si1-xGex islands produced by controlled relaxation of strained films

R. Bashir; K. J. Chao; A. E. Kabir

doi:10.1116/1.1354976

Atomic force microscopy studies of self-assembled Si_1-xGe_x islands produced by controlled relaxation of strained films

R. Bashir, K. J. Chao, A. E. Kabir

Research output: Contribution to journal › Article › peer-review

Abstract

A new technique to form ordered self-assembled device islands using annealing of thin SiGe films was examined. The island distribution and size were examined using AFM and the highest density and smallest size islands were formed in the smallest size oxide windows.

Original language	English (US)
Pages (from-to)	517-522
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	2
DOIs	https://doi.org/10.1116/1.1354976
State	Published - Mar 2001
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1116/1.1354976

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Cite this

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title = "Atomic force microscopy studies of self-assembled Si1-xGex islands produced by controlled relaxation of strained films",

abstract = "A new technique to form ordered self-assembled device islands using annealing of thin SiGe films was examined. The island distribution and size were examined using AFM and the highest density and smallest size islands were formed in the smallest size oxide windows.",

author = "R. Bashir and Chao, {K. J.} and Kabir, {A. E.}",

year = "2001",

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