Atomic displacement processes in irradiated amorphous and crystalline silicon

K. Nordlund, Robert S Averback

Research output: Contribution to journalArticlepeer-review

Abstract

Ion beam mixing was investigated in crystalline and amorphous Si using molecular dynamics simulations. The magnitude of mixing was found to be larger in amorphous Si by a factor of about 2. The difference is attributed to local relaxation mechanisms occurring during the cooling down phase of the cascade. Comparison of mixing between Si and Al shows that short range structural order also has a significant influence on mixing.

Original languageEnglish (US)
Pages (from-to)3101-3103
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number23
DOIs
StatePublished - Jun 9 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Atomic displacement processes in irradiated amorphous and crystalline silicon'. Together they form a unique fingerprint.

Cite this