Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy

Keyphrases

• Scanning Tunneling Microscopy 100%
• Si(111) 100%
• 3D Mapping 100%
• Boron Dopant 100%
• H-surfaces 50%
• Boron 50%
• Hillocks 50%
• Image States 50%
• Band Gap 25%
• Ultra-high Vacuum 25%
• Surface States 25%
• Electronic Structure 25%
• Dopant Atoms 25%
• Dopant 25%
• Microscopic Study 25%
• Three-dimensional Map 25%
• Image Current 25%
• Tunneling Spectroscopy 25%
• Ultrasmall 25%
• Subsurface Layer 25%
• Dopant Profile 25%
• Active Dopants 25%
• Tip-induced Band Bending 25%
• Local Depression 25%
• Electronic Device Structures 25%

Material Science

• Boron 100%
• Doping (Additives) 100%
• Scanning Tunneling Microscopy 100%
• Surface (Surface Science) 60%
• Silicon 20%