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Asymmetric semiconductor nanostructures for particle manipulation
Jaykob Maser,
Joshua Rovey
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Keyphrases
Gallium Arsenide
100%
Semiconductor Nanostructures
100%
Indium Tin Oxide
100%
Particle Manipulation
100%
Zinc-aluminum Alloy
100%
Vacuum Environment
50%
Material Selection
50%
Thermally Stable
50%
Zinc Oxide Nanostructures
50%
Asymmetric Nanostructure
50%
Electromagnetic Response
50%
Heat Conductivity
50%
Incident Wavelength
50%
Uniform Electric Field
50%
COMSOL Multiphysics
50%
Electric Field Response
50%
Average Electric Field
50%
Chemical Engineering
Indium
100%
Gallium Arsenide
100%
Zinc Oxide
100%
Tin Oxide
100%
Thermal Conductivity
50%
Material Science
Nanocrystalline Material
100%
Gallium Arsenide
66%
Aluminum
66%
Indium Tin Oxide
66%
Zinc Oxide
66%
Thermal Conductivity
33%
Material Selection
33%