The ambipolar behavior limits the performance of Schottky-barrier-type graphene nanoribbon field-effect transistors (SB-GNRFETs). We propose an asymmetric gate (AG) design for SB-GNRFETs, and show that it can significantly reduce the IOFF. Simulation results indicate at least 40% and 5× improvement in the subthreshold swing and the ION/IOFF ratio, respectively. We build an accurate semianalytical closed-form model for the current-voltage characteristics of SB-GNRFETs. The proposed Simulation Program with Integrated Circuit Emphasis (SPICE)-compatible model considering various design parameters and process variation effects, which enables efficient circuit-level simulations of SB-GNRFET-based circuits. Simulation results of benchmark circuits show that the average energy-delay product of the AG SB-GNRFETs is only ∼ 22% of that of a symmetric gate for the ideal case and ∼ 88% for devices with line edge roughness.
- Asymmetric gate (AG)
- Schottky-barrier (SB).
- graphene nanoribbon field-effect transistor (GNRFET)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering