Asymmetric gate schottky-barrier graphene nanoribbon FETs for low-power design

Morteza Gholipour, Nasser Masoumi, Ying Yu Christine Chen, Deming Chen, Mahdi Pourfath

Research output: Contribution to journalArticle

Abstract

The ambipolar behavior limits the performance of Schottky-barrier-type graphene nanoribbon field-effect transistors (SB-GNRFETs). We propose an asymmetric gate (AG) design for SB-GNRFETs, and show that it can significantly reduce the IOFF. Simulation results indicate at least 40% and 5× improvement in the subthreshold swing and the ION/IOFF ratio, respectively. We build an accurate semianalytical closed-form model for the current-voltage characteristics of SB-GNRFETs. The proposed Simulation Program with Integrated Circuit Emphasis (SPICE)-compatible model considering various design parameters and process variation effects, which enables efficient circuit-level simulations of SB-GNRFET-based circuits. Simulation results of benchmark circuits show that the average energy-delay product of the AG SB-GNRFETs is only ∼ 22% of that of a symmetric gate for the ideal case and ∼ 88% for devices with line edge roughness.

Original languageEnglish (US)
Article number6963472
Pages (from-to)4000-4006
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume61
Issue number12
DOIs
StatePublished - Dec 1 2014

Keywords

  • Asymmetric gate (AG)
  • Schottky-barrier (SB).
  • graphene nanoribbon field-effect transistor (GNRFET)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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