Keyphrases
Gallium Arsenide
100%
Microcrystals
100%
Arsenic Oxide
100%
Arsenic Trioxide
100%
Electrochemical Growth
100%
GaAs Surface
50%
Defect Sites
25%
Impurities
25%
Extended Defects
25%
Photoluminescence
25%
Raman Signal
25%
Etching Process
25%
Luminescence
25%
GaAs Substrate
25%
Etching Time
25%
Cathodoluminescence
25%
Near-field Scanning Optical Microscopy
25%
High Current Density
25%
Emission Band
25%
Anodic Etching
25%
Electrochemical Processing
25%
Confined Phonons
25%
GaAs Wafer
25%
Etch pit
25%
Spatially Resolved Spectroscopy
25%
Strong Emission
25%
Quantum Size Effect
25%
Polarized Raman Spectroscopy
25%
HCl Concentration
25%
Spatially Resolved Imaging
25%
Concentrated HCl
25%
Microcrystal Growth
25%
Chemistry
Phonon
100%
Crystal Point Defect
100%
Photoluminescence
100%
Current Density
100%
Raman Spectroscopy
100%
Arsenic Oxide
100%
Cathodoluminescence
100%
Quantum Size Effect
100%
Near-Field Scanning Optical Microscopy
100%
Material Science
Oxide Compound
100%
Gallium Arsenide
100%
Arsenic
100%
Density
16%
Amorphous Material
16%
Point Defect
16%
Photoluminescence
16%
Luminescence
16%
Raman Spectroscopy
16%
Cathodoluminescence
16%
Engineering
Gallium Arsenide
100%
Arsenic
100%
Induced Surface
20%
Defect Site
20%
Extended Defect
20%
Etching Process
20%
Size Effect
20%
Gaas Substrate
20%
High Current Density
20%
Emission Band
20%
Confined Phonons
20%