TY - GEN
T1 - Array of microcantilever heaters with integrated piezoresistors
AU - Lee, Jungchul
AU - King, William P.
PY - 2007
Y1 - 2007
N2 - This paper presents improved design, fabrication, and characterization of a small array of silicon microcantilever heaters with integrated piezoresistors. The fabricated microcantilever arrays are made from single crystal silicon with selective doping such that parasitic bending and electromigration can be suppressed during high temperature operation. Detailed characterization was performed to test the device electrical, thermal, and mechanical properties. The performance and crosstalk between heater and piezoresistor elements was thoroughly tested. The resistive heater can reach temperature higher than 600 °C, and its temperature coefficient of electrical resistance was 2.01 × 10-3 Ω/Ω-°C. When biased at 2 V in a Wheatstone bridge, the deflection sensitivity of the piezoresistor was 4.25 × 10-4 V/V-μm and remarkably, the heater circuit had a non-negligible deflection sensitivity of 7.86 × 10-5 V/V-μm. Both the piezoresistor and the resistive heater were interfaced with a commercial atomic force microscope (AFM) to measure their sensitivities during topography sensing of a calibration grating. As expected, the sensitivity of thermal reading was at least one order of magnitude greater than that of piezoresistive reading.
AB - This paper presents improved design, fabrication, and characterization of a small array of silicon microcantilever heaters with integrated piezoresistors. The fabricated microcantilever arrays are made from single crystal silicon with selective doping such that parasitic bending and electromigration can be suppressed during high temperature operation. Detailed characterization was performed to test the device electrical, thermal, and mechanical properties. The performance and crosstalk between heater and piezoresistor elements was thoroughly tested. The resistive heater can reach temperature higher than 600 °C, and its temperature coefficient of electrical resistance was 2.01 × 10-3 Ω/Ω-°C. When biased at 2 V in a Wheatstone bridge, the deflection sensitivity of the piezoresistor was 4.25 × 10-4 V/V-μm and remarkably, the heater circuit had a non-negligible deflection sensitivity of 7.86 × 10-5 V/V-μm. Both the piezoresistor and the resistive heater were interfaced with a commercial atomic force microscope (AFM) to measure their sensitivities during topography sensing of a calibration grating. As expected, the sensitivity of thermal reading was at least one order of magnitude greater than that of piezoresistive reading.
KW - Cantilever array
KW - Crosstalk
KW - Heated cantilever
KW - Piezoresistive reading
KW - Piezoresistor
KW - Thermal reading
UR - http://www.scopus.com/inward/record.url?scp=52949096154&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=52949096154&partnerID=8YFLogxK
U2 - 10.1109/NANO.2007.4601156
DO - 10.1109/NANO.2007.4601156
M3 - Conference contribution
AN - SCOPUS:52949096154
SN - 1424406080
SN - 9781424406081
T3 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
SP - 135
EP - 140
BT - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
T2 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
Y2 - 2 August 2007 through 5 August 2007
ER -