Area selective CVD of metallic films using precursor gases and inhibitors

Provided herein are methods for forming a layer on a substrate wherein the layer is formed selectively on a first region of the substrate relative to a second region having a composition different than the first region. Methods of the invention include selectively forming a layer using an inhibitor agent capable of reducing the average acidity of a first region of the substrate having a composition characterized by a plurality of hydroxyl groups. Methods of the invention include selectively forming a layer by exposure of the substrate to: (i) an inhibitor agent comprising a substituted or an unsubstituted amine group, a substituted or an unsubstituted pyridyl group, a carbonyl group, or a combination of these, and (ii) a precursor gas comprising one or more ligands selected from the group consisting of a carbonyl group, an allyl group, combination thereof.