Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices

Keyphrases

• Metal-oxide-semiconductor Devices 100%
• Prestress 100%
• Hot Carrier Reliability 100%
• Deuterium Incorporation 100%
• Silica 50%
• Transistor 50%
• Deuterium 50%
• Deuterium Annealing 50%
• Annealing 25%
• Rate-limiting Step 25%
• Passivated 25%
• Annealing Temperature 25%
• Deuteration 25%
• Processing Technology 25%
• Deuterium Isotope Effect 25%
• Complementary Metal Oxide Semiconductor 25%
• Semiconductor Processing 25%
• Interface Traps 25%
• Deuterium Diffusion 25%
• Reliability Improvement 25%
• Hot Carrier Stress 25%
• Metal-oxide-semiconductor Transistor 25%

Engineering

• Semiconductor Device 100%
• Metal Oxide Semiconductor 100%
• Prestress 100%
• Si Interface 66%
• Silicon Dioxide 66%
• Annealing Temperature 33%
• Processing Technology 33%
• Limiting Step 33%
• Complementary Metal-Oxide-Semiconductor 33%
• Reliability Improvement 33%
• Interface Trap 33%

Material Science

• Metal Oxide 100%
• Oxide Semiconductor 100%
• Deuterium 100%
• Hot Carrier 100%
• Semiconductor Device 100%
• Transistor 37%
• Annealing 25%
• Complementary Metal-Oxide-Semiconductor Device 12%