Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices

Kangguo Cheng, Jinju Lee, Joseph W. Lyding

Research output: Contribution to journalArticle

Abstract

The deuterium isotope effect has been widely demonstrated to improve hot-carrier reliability in metal-oxide-semiconductor transistors. Most of the interface traps, however, may have been passivated by hydrogen before the final deuterium anneal due to the ubiquitous presence of hydrogen in modern complementary metal-oxide-semiconductor processing technology. Therefore, effective deuteration requires both deuterium diffusion to the SiO2-Si interface and displacement of the previously bonded hydrogen. We have introduced a "prestress" process in which hydrogen is depassivated before deuterium annealing. We found that the prestressed transistors are more robust to hot-carrier stress than control transistors without the prestress. We have also found that the replacement of hydrogen with deuterium is the rate-limiting step for deuterium incorporation at the SiO2-Si interface. With the prestress, a lower deuterium annealing temperature can be applied without compromising the reliability improvement.

Original languageEnglish (US)
Pages (from-to)2358-2360
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number15
DOIs
StatePublished - Oct 9 2000

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semiconductor devices
metal oxide semiconductors
deuterium
hydrogen
transistors
annealing
isotope effect
CMOS
traps

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices. / Cheng, Kangguo; Lee, Jinju; Lyding, Joseph W.

In: Applied Physics Letters, Vol. 77, No. 15, 09.10.2000, p. 2358-2360.

Research output: Contribution to journalArticle

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