Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)

M. C. Hersam, G. C. Abeln, Joseph W Lyding

Research output: Contribution to journalConference article

Abstract

The development of atomically precise UHV-STM nanofabrication of metallic, dielectric, and organic nanostructures on Si(100) surfaces has created new opportunities for realizing future nanoelectronic devices. Concomitant with these opportunities are the practical challenges of efficient location/registration of nanostructures and macroscopic-to-nanoscale electrical interfaces. In this paper, we present an approach utilizing p-n junctions to contact nanostructures. The junctions are located potentiometrically and are fully compatible with UHV experimental procedures.

Original languageEnglish (US)
Pages (from-to)235-237
Number of pages3
JournalMicroelectronic Engineering
Volume47
Issue number1
DOIs
StatePublished - Jun 1999
EventProceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) - Kauai, HI, USA
Duration: Dec 7 1998Dec 11 1998

Fingerprint

nanofabrication
p-n junctions
Lithography
Nanostructures
lithography
Nanoelectronics
Nanotechnology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100). / Hersam, M. C.; Abeln, G. C.; Lyding, Joseph W.

In: Microelectronic Engineering, Vol. 47, No. 1, 06.1999, p. 235-237.

Research output: Contribution to journalConference article

@article{a92bffc9ae8f4df0aba53b4b851c1ccd,
title = "Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)",
abstract = "The development of atomically precise UHV-STM nanofabrication of metallic, dielectric, and organic nanostructures on Si(100) surfaces has created new opportunities for realizing future nanoelectronic devices. Concomitant with these opportunities are the practical challenges of efficient location/registration of nanostructures and macroscopic-to-nanoscale electrical interfaces. In this paper, we present an approach utilizing p-n junctions to contact nanostructures. The junctions are located potentiometrically and are fully compatible with UHV experimental procedures.",
author = "Hersam, {M. C.} and Abeln, {G. C.} and Lyding, {Joseph W}",
year = "1999",
month = "6",
doi = "10.1016/S0167-9317(99)00203-8",
language = "English (US)",
volume = "47",
pages = "235--237",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)

AU - Hersam, M. C.

AU - Abeln, G. C.

AU - Lyding, Joseph W

PY - 1999/6

Y1 - 1999/6

N2 - The development of atomically precise UHV-STM nanofabrication of metallic, dielectric, and organic nanostructures on Si(100) surfaces has created new opportunities for realizing future nanoelectronic devices. Concomitant with these opportunities are the practical challenges of efficient location/registration of nanostructures and macroscopic-to-nanoscale electrical interfaces. In this paper, we present an approach utilizing p-n junctions to contact nanostructures. The junctions are located potentiometrically and are fully compatible with UHV experimental procedures.

AB - The development of atomically precise UHV-STM nanofabrication of metallic, dielectric, and organic nanostructures on Si(100) surfaces has created new opportunities for realizing future nanoelectronic devices. Concomitant with these opportunities are the practical challenges of efficient location/registration of nanostructures and macroscopic-to-nanoscale electrical interfaces. In this paper, we present an approach utilizing p-n junctions to contact nanostructures. The junctions are located potentiometrically and are fully compatible with UHV experimental procedures.

UR - http://www.scopus.com/inward/record.url?scp=0032594650&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032594650&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(99)00203-8

DO - 10.1016/S0167-9317(99)00203-8

M3 - Conference article

AN - SCOPUS:0032594650

VL - 47

SP - 235

EP - 237

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1

ER -