Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)

M. C. Hersam; G. C. Abeln; J. W. Lyding

doi:10.1016/S0167-9317(99)00203-8

Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)

M. C. Hersam, G. C. Abeln, J. W. Lyding

Research output: Contribution to journal › Conference article › peer-review

Abstract

The development of atomically precise UHV-STM nanofabrication of metallic, dielectric, and organic nanostructures on Si(100) surfaces has created new opportunities for realizing future nanoelectronic devices. Concomitant with these opportunities are the practical challenges of efficient location/registration of nanostructures and macroscopic-to-nanoscale electrical interfaces. In this paper, we present an approach utilizing p-n junctions to contact nanostructures. The junctions are located potentiometrically and are fully compatible with UHV experimental procedures.

Original language	English (US)
Pages (from-to)	235-237
Number of pages	3
Journal	Microelectronic Engineering
Volume	47
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(99)00203-8
State	Published - Jun 1999
Event	Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) - Kauai, HI, USA Duration: Dec 7 1998 → Dec 11 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Online availability

10.1016/S0167-9317(99)00203-8

Library availability

Discover UIUC Full Text

Cite this

@article{a92bffc9ae8f4df0aba53b4b851c1ccd,

title = "Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)",

abstract = "The development of atomically precise UHV-STM nanofabrication of metallic, dielectric, and organic nanostructures on Si(100) surfaces has created new opportunities for realizing future nanoelectronic devices. Concomitant with these opportunities are the practical challenges of efficient location/registration of nanostructures and macroscopic-to-nanoscale electrical interfaces. In this paper, we present an approach utilizing p-n junctions to contact nanostructures. The junctions are located potentiometrically and are fully compatible with UHV experimental procedures.",

author = "Hersam, {M. C.} and Abeln, {G. C.} and Lyding, {J. W.}",

note = "Funding Information: The authors have benefited from discussions with Prof. Jeff Moore, Prof. Karl Hess, Dr. Janelle Gunther, Dr. Hyungsoo Choi, Dr. Jiutao Li, and Scott Thompson. M. C. Hersam thanks the National Science Foundation for a graduate research fellowship. This work is supported by the Office of Naval Research Multidisciplinary University Research Initiative.; Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) ; Conference date: 07-12-1998 Through 11-12-1998",

year = "1999",

month = jun,

doi = "10.1016/S0167-9317(99)00203-8",

language = "English (US)",

volume = "47",

pages = "235--237",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)

AU - Hersam, M. C.

AU - Abeln, G. C.

AU - Lyding, J. W.

N1 - Funding Information: The authors have benefited from discussions with Prof. Jeff Moore, Prof. Karl Hess, Dr. Janelle Gunther, Dr. Hyungsoo Choi, Dr. Jiutao Li, and Scott Thompson. M. C. Hersam thanks the National Science Foundation for a graduate research fellowship. This work is supported by the Office of Naval Research Multidisciplinary University Research Initiative.

PY - 1999/6

Y1 - 1999/6

N2 - The development of atomically precise UHV-STM nanofabrication of metallic, dielectric, and organic nanostructures on Si(100) surfaces has created new opportunities for realizing future nanoelectronic devices. Concomitant with these opportunities are the practical challenges of efficient location/registration of nanostructures and macroscopic-to-nanoscale electrical interfaces. In this paper, we present an approach utilizing p-n junctions to contact nanostructures. The junctions are located potentiometrically and are fully compatible with UHV experimental procedures.

AB - The development of atomically precise UHV-STM nanofabrication of metallic, dielectric, and organic nanostructures on Si(100) surfaces has created new opportunities for realizing future nanoelectronic devices. Concomitant with these opportunities are the practical challenges of efficient location/registration of nanostructures and macroscopic-to-nanoscale electrical interfaces. In this paper, we present an approach utilizing p-n junctions to contact nanostructures. The junctions are located potentiometrically and are fully compatible with UHV experimental procedures.

UR - http://www.scopus.com/inward/record.url?scp=0032594650&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032594650&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(99)00203-8

DO - 10.1016/S0167-9317(99)00203-8

M3 - Conference article

AN - SCOPUS:0032594650

SN - 0167-9317

VL - 47

SP - 235

EP - 237

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

T2 - Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98)

Y2 - 7 December 1998 through 11 December 1998

ER -

Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this