Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)

M. C. Hersam, G. C. Abeln, J. W. Lyding

Research output: Contribution to journalConference articlepeer-review

Abstract

The development of atomically precise UHV-STM nanofabrication of metallic, dielectric, and organic nanostructures on Si(100) surfaces has created new opportunities for realizing future nanoelectronic devices. Concomitant with these opportunities are the practical challenges of efficient location/registration of nanostructures and macroscopic-to-nanoscale electrical interfaces. In this paper, we present an approach utilizing p-n junctions to contact nanostructures. The junctions are located potentiometrically and are fully compatible with UHV experimental procedures.

Original languageEnglish (US)
Pages (from-to)235-237
Number of pages3
JournalMicroelectronic Engineering
Volume47
Issue number1
DOIs
StatePublished - Jun 1999
EventProceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) - Kauai, HI, USA
Duration: Dec 7 1998Dec 11 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)'. Together they form a unique fingerprint.

Cite this