Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

Young Kwang Kim; Seok Ha Lee; Hyui Seung Lee; Bong Seok Kim; Yong Hee Lee; Jinju Lee; Kangguo Cheng; Zhi Chen; Karl Hess; Joseph W. Lyding

Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

Young Kwang Kim, Seok Ha Lee, Hyui Seung Lee, Bong Seok Kim, Yong Hee Lee, Jinju Lee, Kangguo Cheng, Zhi Chen, Karl Hess, Joseph W. Lyding

Research output: Contribution to conference › Paper › peer-review

Abstract

The latent damage induced by plasma processes has been investigated by applying polarized constant current stress to the gate electrode of n- and p-MOSFETs. By optimizing the stressing condition to effectively monitor the plasma damage, deuterium sintering is found to be very efficient at reducing plasma damage by suppressing the regeneration of interface states.

Original language	English (US)
Pages	65-68
Number of pages	4
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) - Monterey, CA, USA Duration: May 9 1999 → May 11 1999

Other

Other	Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)
City	Monterey, CA, USA
Period	5/9/99 → 5/11/99

ASJC Scopus subject areas

General Engineering

Library availability

Discover UIUC Full Text

Cite this

Kim, Y. K., Lee, S. H., Lee, H. S., Kim, B. S., Lee, Y. H., Lee, J., Cheng, K., Chen, Z., Hess, K., & Lyding, J. W. (1999). Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages. 65-68. Paper presented at Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID), Monterey, CA, USA.

Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages. / Kim, Young Kwang; Lee, Seok Ha; Lee, Hyui Seung et al.
1999. 65-68 Paper presented at Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID), Monterey, CA, USA.

Research output: Contribution to conference › Paper › peer-review

Kim, YK, Lee, SH, Lee, HS, Kim, BS, Lee, YH, Lee, J, Cheng, K, Chen, Z, Hess, K & Lyding, JW 1999, 'Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages', Paper presented at Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID), Monterey, CA, USA, 5/9/99 - 5/11/99 pp. 65-68.

@conference{f8dae77bf08a4fccb36ba133c5a1983d,

title = "Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages",

abstract = "The latent damage induced by plasma processes has been investigated by applying polarized constant current stress to the gate electrode of n- and p-MOSFETs. By optimizing the stressing condition to effectively monitor the plasma damage, deuterium sintering is found to be very efficient at reducing plasma damage by suppressing the regeneration of interface states.",

author = "Kim, {Young Kwang} and Lee, {Seok Ha} and Lee, {Hyui Seung} and Kim, {Bong Seok} and Lee, {Yong Hee} and Jinju Lee and Kangguo Cheng and Zhi Chen and Karl Hess and Lyding, {Joseph W.}",

year = "1999",

language = "English (US)",

pages = "65--68",

note = "Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) ; Conference date: 09-05-1999 Through 11-05-1999",

}

TY - CONF

T1 - Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

AU - Kim, Young Kwang

AU - Lee, Seok Ha

AU - Lee, Hyui Seung

AU - Kim, Bong Seok

AU - Lee, Yong Hee

AU - Lee, Jinju

AU - Cheng, Kangguo

AU - Chen, Zhi

AU - Hess, Karl

AU - Lyding, Joseph W.

PY - 1999

Y1 - 1999

N2 - The latent damage induced by plasma processes has been investigated by applying polarized constant current stress to the gate electrode of n- and p-MOSFETs. By optimizing the stressing condition to effectively monitor the plasma damage, deuterium sintering is found to be very efficient at reducing plasma damage by suppressing the regeneration of interface states.

AB - The latent damage induced by plasma processes has been investigated by applying polarized constant current stress to the gate electrode of n- and p-MOSFETs. By optimizing the stressing condition to effectively monitor the plasma damage, deuterium sintering is found to be very efficient at reducing plasma damage by suppressing the regeneration of interface states.

UR - http://www.scopus.com/inward/record.url?scp=0033338219&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033338219&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033338219

SP - 65

EP - 68

T2 - Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)

Y2 - 9 May 1999 through 11 May 1999

ER -

Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

Abstract

Other

ASJC Scopus subject areas

Library availability

Related links

Fingerprint

Cite this