Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

Young Kwang Kim, Seok Ha Lee, Hyui Seung Lee, Bong Seok Kim, Yong Hee Lee, Jinju Lee, Kangguo Cheng, Zhi Chen, Karl Hess, Joseph W. Lyding

Research output: Contribution to conferencePaper

Abstract

The latent damage induced by plasma processes has been investigated by applying polarized constant current stress to the gate electrode of n- and p-MOSFETs. By optimizing the stressing condition to effectively monitor the plasma damage, deuterium sintering is found to be very efficient at reducing plasma damage by suppressing the regeneration of interface states.

Original languageEnglish (US)
Pages65-68
Number of pages4
StatePublished - Dec 1 1999
Externally publishedYes
EventProceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) - Monterey, CA, USA
Duration: May 9 1999May 11 1999

Other

OtherProceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)
CityMonterey, CA, USA
Period5/9/995/11/99

ASJC Scopus subject areas

  • Engineering(all)

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    Kim, Y. K., Lee, S. H., Lee, H. S., Kim, B. S., Lee, Y. H., Lee, J., Cheng, K., Chen, Z., Hess, K., & Lyding, J. W. (1999). Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages. 65-68. Paper presented at Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID), Monterey, CA, USA, .