Application of narrow band-gap materials in nanoscale spin filters

M. J. Gilbert; J. P. Bird; T. Sugaya; R. Akis

doi:10.1016/S0921-4526(01)01446-6

Application of narrow band-gap materials in nanoscale spin filters

M. J. Gilbert, J. P. Bird, T. Sugaya, R. Akis

Research output: Contribution to journal › Article › peer-review

Abstract

We develop a simple analytical model to study the influence of different material systems on the operation of a quantum-point-contact spin filter. Such a device has been predicted to allow for local control of the spin polarization in a semiconductor, and for direct electrical detection of the induced spin polarization. Narrow band-gap semiconductors, such as InAs and InSb, are predicted to exhibit excellent spin-filter characteristics, due to their large g-factor values, and enhanced subband splittings. As a practical step towards the realization of such a spin filter, the electrical properties of InGaAs quantum wires are investigated.

Original language	English (US)
Pages (from-to)	230-234
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01446-6
State	Published - Mar 2002
Externally published	Yes

Keywords

Quantum point contact
Spin filter
Spintronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1016/S0921-4526(01)01446-6

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abstract = "We develop a simple analytical model to study the influence of different material systems on the operation of a quantum-point-contact spin filter. Such a device has been predicted to allow for local control of the spin polarization in a semiconductor, and for direct electrical detection of the induced spin polarization. Narrow band-gap semiconductors, such as InAs and InSb, are predicted to exhibit excellent spin-filter characteristics, due to their large g-factor values, and enhanced subband splittings. As a practical step towards the realization of such a spin filter, the electrical properties of InGaAs quantum wires are investigated.",

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AU - Gilbert, M. J.

AU - Bird, J. P.

AU - Sugaya, T.

AU - Akis, R.

N1 - Funding Information: This work was supported by the Office of Naval Research.

PY - 2002/3

Y1 - 2002/3

N2 - We develop a simple analytical model to study the influence of different material systems on the operation of a quantum-point-contact spin filter. Such a device has been predicted to allow for local control of the spin polarization in a semiconductor, and for direct electrical detection of the induced spin polarization. Narrow band-gap semiconductors, such as InAs and InSb, are predicted to exhibit excellent spin-filter characteristics, due to their large g-factor values, and enhanced subband splittings. As a practical step towards the realization of such a spin filter, the electrical properties of InGaAs quantum wires are investigated.

AB - We develop a simple analytical model to study the influence of different material systems on the operation of a quantum-point-contact spin filter. Such a device has been predicted to allow for local control of the spin polarization in a semiconductor, and for direct electrical detection of the induced spin polarization. Narrow band-gap semiconductors, such as InAs and InSb, are predicted to exhibit excellent spin-filter characteristics, due to their large g-factor values, and enhanced subband splittings. As a practical step towards the realization of such a spin filter, the electrical properties of InGaAs quantum wires are investigated.

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KW - Spin filter

KW - Spintronics

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Application of narrow band-gap materials in nanoscale spin filters

Abstract

Keywords

ASJC Scopus subject areas

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