Application of narrow band-gap materials in nanoscale spin filters

M. J. Gilbert, J. P. Bird, T. Sugaya, R. Akis

Research output: Contribution to journalArticlepeer-review


We develop a simple analytical model to study the influence of different material systems on the operation of a quantum-point-contact spin filter. Such a device has been predicted to allow for local control of the spin polarization in a semiconductor, and for direct electrical detection of the induced spin polarization. Narrow band-gap semiconductors, such as InAs and InSb, are predicted to exhibit excellent spin-filter characteristics, due to their large g-factor values, and enhanced subband splittings. As a practical step towards the realization of such a spin filter, the electrical properties of InGaAs quantum wires are investigated.

Original languageEnglish (US)
Pages (from-to)230-234
Number of pages5
JournalPhysica B: Condensed Matter
Issue number1-4
StatePublished - Mar 2002
Externally publishedYes


  • Quantum point contact
  • Spin filter
  • Spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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