Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors

Jong Wook Seo, Ilesanmi Adesida, Catherine Caneau, Rajaram Bhat

Research output: Contribution to journalArticlepeer-review


The optical transmittance of indium-tin-oxide (ITO) at a wavelength of 1.3 pm has been improved by adding forming gas (H2/N2) to the Ar sputtering gas. It is shown that the presence of H2 in the plasma decreases the carrier concentration in ITO, and increases the optical transmittance of a 320 nm-thick ITO film from 69.7% to 99.5%. The application of the high transmittance ITO to the fabrication of metal-semiconductor-metal (MSM) photodiodes on InAlAs/InGaAs heterostructures has resulted in an improvement of responsivity from 0.6 A/W to 0.76 A/W. This is double the responsivity of 0.39 A/W obtained for Ti/Au detectors. A 3-dB bandwidth of 6 GHz was obtained for the high transparency ITO device with 3 μm fingers and gaps and with an area of 50 × 50 μm2.

Original languageEnglish (US)
Pages (from-to)1313-1315
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number11
StatePublished - Nov 1993
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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