Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

Keyphrases

• Wafer 100%
• CMOS Transistor 100%
• Hot Carrier Reliability 100%
• High-pressure Deuterium Annealing 100%
• Secondary Ion Mass Spectrometry 50%
• Annealing 50%
• Silica 50%
• High Pressure 50%
• Capping Layer 50%
• Annealing Time 50%
• Nitrides 50%
• Metal Layer 50%
• High-pressure Annealing 50%
• Silicon Oxynitride (SiON) 50%
• Lifetime Improvement 50%
• Reliability Improvement 50%
• Sidewall Spacer 50%
• Deuterium Incorporation 50%
• Forming Gas Annealing 50%

Engineering

• Side Wall 100%
• Nitride 100%
• Annealing Time 100%
• Si Interface 100%
• Metal Layer 100%
• Cap Layer 100%
• Forming Gas Anneal 100%
• Reliability Improvement 100%

Material Science

• Transistor 100%
• Deuterium 100%
• Hot Carrier 100%
• Annealing 66%
• Secondary Ion Mass Spectrometry 33%
• Nitride Compound 33%