The response of the point defect and antistructure systems to ion beam irradiation is investigated using methods of linear response on thin single crystals of ordered Cu3Au grown by molecular beam epitaxy. We demonstrate that antisite evolution, as measured by electrical resistance, quantitatively determines both the defect populations and diffusion in the irradiation field, and we explore new linear and nonlinear response processes as the antistructure system is driven from equilibrium.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical review letters|
|State||Published - 2000|
ASJC Scopus subject areas
- Physics and Astronomy(all)