Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As

R. C. Myers, B. L. Sheu, A. W. Jackson, A. C. Gossard, Peter E Schiffer, N. Samarth, D. D. Awschalom

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Abstract

We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1%-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from TC p0.33 is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.

Original languageEnglish (US)
Article number155203
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number15
DOIs
StatePublished - Oct 18 2006

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ASJC Scopus subject areas

  • Condensed Matter Physics

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Myers, R. C., Sheu, B. L., Jackson, A. W., Gossard, A. C., Schiffer, P. E., Samarth, N., & Awschalom, D. D. (2006). Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As. Physical Review B - Condensed Matter and Materials Physics, 74(15), [155203]. https://doi.org/10.1103/PhysRevB.74.155203