TY - JOUR
T1 - Anomalous strain relaxation and light-hole character enhancement in GaAs capped InAs/In0.53Ga0.47As quantum ring
AU - Moon, Pilkyung
AU - Park, Kwangmin
AU - Yoon, Euijoon
AU - Leburton, Jean Pierre
PY - 2009
Y1 - 2009
N2 - We theoretically investigated the strain profiles and the electronic structures of InAs/In0.53Ga0.47As quantum dot and GaAs capped quantum ring. In contrast to the intuitive expectation that the GaAs layer applies a strong compressive strain along the lateral directions of InAs, the GaAs embedded in the In0.53Ga0.47As matrix provides enough space for the InAs relaxation. The GaAs embedded in In0.53Ga0.47As acts as potential barrier for both electrons and heavy-holes, and as potential well for light-holes. Each hole state of the quantum ring exhibits two to eight times larger light-hole character than that of a quantum dot.
AB - We theoretically investigated the strain profiles and the electronic structures of InAs/In0.53Ga0.47As quantum dot and GaAs capped quantum ring. In contrast to the intuitive expectation that the GaAs layer applies a strong compressive strain along the lateral directions of InAs, the GaAs embedded in the In0.53Ga0.47As matrix provides enough space for the InAs relaxation. The GaAs embedded in In0.53Ga0.47As acts as potential barrier for both electrons and heavy-holes, and as potential well for light-holes. Each hole state of the quantum ring exhibits two to eight times larger light-hole character than that of a quantum dot.
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U2 - 10.1002/pssr.200802277
DO - 10.1002/pssr.200802277
M3 - Article
AN - SCOPUS:71149100843
SN - 1862-6254
VL - 3
SP - 76
EP - 78
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 2-3
ER -