Anomalous strain relaxation and light-hole character enhancement in GaAs capped InAs/In0.53Ga0.47As quantum ring

Pilkyung Moon, Kwangmin Park, Euijoon Yoon, Jean Pierre Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

We theoretically investigated the strain profiles and the electronic structures of InAs/In0.53Ga0.47As quantum dot and GaAs capped quantum ring. In contrast to the intuitive expectation that the GaAs layer applies a strong compressive strain along the lateral directions of InAs, the GaAs embedded in the In0.53Ga0.47As matrix provides enough space for the InAs relaxation. The GaAs embedded in In0.53Ga0.47As acts as potential barrier for both electrons and heavy-holes, and as potential well for light-holes. Each hole state of the quantum ring exhibits two to eight times larger light-hole character than that of a quantum dot.

Original languageEnglish (US)
Pages (from-to)76-78
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume3
Issue number2-3
DOIs
StatePublished - Dec 9 2009

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Anomalous strain relaxation and light-hole character enhancement in GaAs capped InAs/In<sup>0.53</sup>Ga<sup>0.47</sup>As quantum ring'. Together they form a unique fingerprint.

Cite this