@inproceedings{febd409c27c544d3bfa5bfd73b8010b8,
title = "Anomalous stark effect in intraband absorption of silicon nanocrystals",
abstract = "Intraband transitions in Si/SiO2 quantum dots (QD's) are addressed in this work. We found that external electric fields (FEXT) strongly affect the absorbing properties of large QD's (> 5 nm) by creating additional absorption peaks. Moreover, the anisotropic nature and degeneracy of Si band structure couples with the shape of QD's such that the absorption coefficient response to FEXT becomes highly anisotropic for non-spherical shapes.",
author = "{De Sousa}, {J. S.} and Leburton, {J. P.} and Freire, {V. N.} and {Da Silva}, {E. F.}",
note = "Funding Information: “The study was supported by the DFG grant Ko3814/1-1 to L.A.H.-H., G.C.G. and R.K.” Funding Information: “The study was supported by the DFG grant Ko3814/1-1 to L.A.H.-H., G.C.G. and R.K. The authors sincerely thank Christin Keller for her assistance with the oxyblot recordings and Peter Kloetzel for the Financial Support of M.M. through the Berlin Institute of Health (BIH) Project CRG1 TP1 12.01.111.”; PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994374",
language = "English (US)",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "853--854",
booktitle = "PHYSICS OF SEMICONDUCTORS",
}