Anomalous stark effect in intraband absorption of silicon nanocrystals

J. S. De Sousa, J. P. Leburton, V. N. Freire, E. F. Da Silva

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Intraband transitions in Si/SiO2 quantum dots (QD's) are addressed in this work. We found that external electric fields (FEXT) strongly affect the absorbing properties of large QD's (> 5 nm) by creating additional absorption peaks. Moreover, the anisotropic nature and degeneracy of Si band structure couples with the shape of QD's such that the absorption coefficient response to FEXT becomes highly anisotropic for non-spherical shapes.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages853-854
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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