Abstract
A strong non-parabolic dependence of interband transition energy on the electric field was exhibited by the vertically stacked InAs/GaAs self-assembled quantum dots due to the three-dimensional (3D) distribution of the biaxial strain field. The ground state transition energies for the single dot and for the stacked structure were calculated as functions of electric fields. The electron and hole states of the system were obtained from the Schrödinger equation in the framework of the envelop function formalism.
| Original language | English (US) |
|---|---|
| Article number | 167401 |
| Pages (from-to) | 1674011-1674014 |
| Number of pages | 4 |
| Journal | Physical review letters |
| Volume | 88 |
| Issue number | 16 |
| State | Published - 2002 |
ASJC Scopus subject areas
- General Physics and Astronomy