TY - JOUR
T1 - Anomalous polarization-dependent transport in nanoscale double-barrier superconductor/ferromagnet/superconductor junctions
AU - Colci, Madalina
AU - Sun, Kuei
AU - Shah, Nayana
AU - Vishveshwara, Smitha
AU - Van Harlingen, Dale J.
PY - 2012/5/31
Y1 - 2012/5/31
N2 - We study the transport properties of nanoscale superconducting (S) devices in which two superconducting electrodes are bridged by two parallel ferromagnetic (F) wires, forming an SFFS junction with a separation between the two wires less than the superconducting coherence length. This allows crossed Andreev reflection to take place. We find that the resistance as a function of temperature exhibits behavior reminiscent of the reentrant effect and, at low temperatures and excitation energies below the superconducting gap, the resistance corresponding to antiparallel alignment of the magnetization of the ferromagnetic wires is higher than that of parallel alignment, in contrast to the behavior expected from crossed Andreev reflection. We present a model based on spin-dependent interface scattering that explains this surprising result and demonstrates the sensitivity of the junction transport properties to interfacial parameters.
AB - We study the transport properties of nanoscale superconducting (S) devices in which two superconducting electrodes are bridged by two parallel ferromagnetic (F) wires, forming an SFFS junction with a separation between the two wires less than the superconducting coherence length. This allows crossed Andreev reflection to take place. We find that the resistance as a function of temperature exhibits behavior reminiscent of the reentrant effect and, at low temperatures and excitation energies below the superconducting gap, the resistance corresponding to antiparallel alignment of the magnetization of the ferromagnetic wires is higher than that of parallel alignment, in contrast to the behavior expected from crossed Andreev reflection. We present a model based on spin-dependent interface scattering that explains this surprising result and demonstrates the sensitivity of the junction transport properties to interfacial parameters.
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U2 - 10.1103/PhysRevB.85.180512
DO - 10.1103/PhysRevB.85.180512
M3 - Article
AN - SCOPUS:84861826870
SN - 1098-0121
VL - 85
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 18
M1 - 180512
ER -