Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown

J. Wu, Elyse Rosenbaum, B. MacDonald, E. Li, J. Tao, B. Tracy, P. Fang

Research output: Contribution to journalArticlepeer-review

Abstract

Recent studies have shown that post-metallization anneal in deuterium can improve transistor lifetime by one order of magnitude or more. In this paper, we show that the gate oxide reliability of devices annealed in deuterium is similar to that of devices annealed in hydrogen. This finding suggests that a model for gate oxide breakdown which involves release of interfacial hydrogen may not be accurate.

Original languageEnglish (US)
Pages (from-to)27-32
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Fingerprint Dive into the research topics of 'Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown'. Together they form a unique fingerprint.

Cite this