Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown

J. Wu, Elyse Rosenbaum, B. MacDonald, E. Li, J. Tao, B. Tracy, P. Fang

Research output: Contribution to journalArticle

Abstract

Recent studies have shown that post-metallization anneal in deuterium can improve transistor lifetime by one order of magnitude or more. In this paper, we show that the gate oxide reliability of devices annealed in deuterium is similar to that of devices annealed in hydrogen. This finding suggests that a model for gate oxide breakdown which involves release of interfacial hydrogen may not be accurate.

Original languageEnglish (US)
Pages (from-to)27-32
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - Jan 1 2000

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Deuterium
Anodes
Hydrogen
Oxides
Metallizing
Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Anode hole injection versus hydrogen release : The mechanism for gate oxide breakdown. / Wu, J.; Rosenbaum, Elyse; MacDonald, B.; Li, E.; Tao, J.; Tracy, B.; Fang, P.

In: Annual Proceedings - Reliability Physics (Symposium), 01.01.2000, p. 27-32.

Research output: Contribution to journalArticle

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