TY - JOUR
T1 - Anode hole injection versus hydrogen release
T2 - The mechanism for gate oxide breakdown
AU - Wu, J.
AU - Rosenbaum, E.
AU - MacDonald, B.
AU - Li, E.
AU - Tao, J.
AU - Tracy, B.
AU - Fang, P.
PY - 2000
Y1 - 2000
N2 - Recent studies have shown that post-metallization anneal in deuterium can improve transistor lifetime by one order of magnitude or more. In this paper, we show that the gate oxide reliability of devices annealed in deuterium is similar to that of devices annealed in hydrogen. This finding suggests that a model for gate oxide breakdown which involves release of interfacial hydrogen may not be accurate.
AB - Recent studies have shown that post-metallization anneal in deuterium can improve transistor lifetime by one order of magnitude or more. In this paper, we show that the gate oxide reliability of devices annealed in deuterium is similar to that of devices annealed in hydrogen. This finding suggests that a model for gate oxide breakdown which involves release of interfacial hydrogen may not be accurate.
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U2 - 10.1109/RELPHY.2000.843887
DO - 10.1109/RELPHY.2000.843887
M3 - Article
AN - SCOPUS:0033742662
SN - 0099-9512
SP - 27
EP - 32
JO - Annual Proceedings - Reliability Physics (Symposium)
JF - Annual Proceedings - Reliability Physics (Symposium)
ER -