Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN

S. Kim, S. J. Rhee, Xiuling Li, J. J. Coleman, S. G. Bishop

Research output: Contribution to journalConference article

Abstract

A study of selectively excited photoluminescence (PL) at approximately 6 K in Er-implanted GaN as a function of annealing temperature (400-1000 °C) has detected nine different Er3+ centers with distinct approximately 1540 nm 4I13/24I15/2 Er3+ PL spectra and different activation temperatures. However, most of the optically active implanted Er atoms are incorporated at annealing temperatures as low as 400 °C on a single type of center for which PL can only be excited efficiently by direct intra-4f shell absorption and is not strongly pumped by either above-gap or broad-band below-gap absorption. This strongly suggests that this high-concentration Er3+ center is an isolated, isoelectronic center consistent with Er3+ substituted on a Ga site. In contrast, a very small fraction of the Er atoms that form a variety of Er-defect/impurity complexes dominate the Er3+ emission spectra excited by above-gap and broad-band below-gap absorption because of their larger cross sections for both carrier capture and optical absorption.

Original languageEnglish (US)
Pages (from-to)266-274
Number of pages9
JournalJournal of Electronic Materials
Volume28
Issue number3
DOIs
StatePublished - Mar 1999
EventProceedings of the 1998 40th Electronic Materials Conference, EMC-98 - Charlottesville, VA, USA
Duration: Jun 24 1998Jun 26 1998

Fingerprint

Photoluminescence
Annealing
photoluminescence
annealing
Energy gap
Atoms
broadband
Temperature
Light absorption
Chemical activation
Impurities
temperature
atoms
Defects
emission spectra
optical absorption
activation
impurities
cross sections
defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN. / Kim, S.; Rhee, S. J.; Li, Xiuling; Coleman, J. J.; Bishop, S. G.

In: Journal of Electronic Materials, Vol. 28, No. 3, 03.1999, p. 266-274.

Research output: Contribution to journalConference article

Kim, S. ; Rhee, S. J. ; Li, Xiuling ; Coleman, J. J. ; Bishop, S. G. / Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN. In: Journal of Electronic Materials. 1999 ; Vol. 28, No. 3. pp. 266-274.
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