TY - JOUR
T1 - Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN
AU - Kim, S.
AU - Rhee, S. J.
AU - Li, X.
AU - Coleman, J. J.
AU - Bishop, S. G.
N1 - The authors would like to acknowledge P.B. Klein for several helpful discussions. This work was supported by NSF under the Engineering Research Centers Program (ECD 89-43166), DARPA (MDA972-94-1-004), and the JSEP (N0014-96-1-10129).
PY - 1999/3
Y1 - 1999/3
N2 - A study of selectively excited photoluminescence (PL) at approximately 6 K in Er-implanted GaN as a function of annealing temperature (400-1000 °C) has detected nine different Er3+ centers with distinct approximately 1540 nm 4I13/2→4I15/2 Er3+ PL spectra and different activation temperatures. However, most of the optically active implanted Er atoms are incorporated at annealing temperatures as low as 400 °C on a single type of center for which PL can only be excited efficiently by direct intra-4f shell absorption and is not strongly pumped by either above-gap or broad-band below-gap absorption. This strongly suggests that this high-concentration Er3+ center is an isolated, isoelectronic center consistent with Er3+ substituted on a Ga site. In contrast, a very small fraction of the Er atoms that form a variety of Er-defect/impurity complexes dominate the Er3+ emission spectra excited by above-gap and broad-band below-gap absorption because of their larger cross sections for both carrier capture and optical absorption.
AB - A study of selectively excited photoluminescence (PL) at approximately 6 K in Er-implanted GaN as a function of annealing temperature (400-1000 °C) has detected nine different Er3+ centers with distinct approximately 1540 nm 4I13/2→4I15/2 Er3+ PL spectra and different activation temperatures. However, most of the optically active implanted Er atoms are incorporated at annealing temperatures as low as 400 °C on a single type of center for which PL can only be excited efficiently by direct intra-4f shell absorption and is not strongly pumped by either above-gap or broad-band below-gap absorption. This strongly suggests that this high-concentration Er3+ center is an isolated, isoelectronic center consistent with Er3+ substituted on a Ga site. In contrast, a very small fraction of the Er atoms that form a variety of Er-defect/impurity complexes dominate the Er3+ emission spectra excited by above-gap and broad-band below-gap absorption because of their larger cross sections for both carrier capture and optical absorption.
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U2 - 10.1007/s11664-999-0026-x
DO - 10.1007/s11664-999-0026-x
M3 - Conference article
AN - SCOPUS:0032626471
SN - 0361-5235
VL - 28
SP - 266
EP - 274
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 3
T2 - Proceedings of the 1998 40th Electronic Materials Conference, EMC-98
Y2 - 24 June 1998 through 26 June 1998
ER -