Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN

S. Kim, S. J. Rhee, X. Li, J. J. Coleman, S. G. Bishop

Research output: Contribution to journalConference article

Abstract

A study of selectively excited photoluminescence (PL) at approximately 6 K in Er-implanted GaN as a function of annealing temperature (400-1000 °C) has detected nine different Er3+ centers with distinct approximately 1540 nm 4I13/24I15/2 Er3+ PL spectra and different activation temperatures. However, most of the optically active implanted Er atoms are incorporated at annealing temperatures as low as 400 °C on a single type of center for which PL can only be excited efficiently by direct intra-4f shell absorption and is not strongly pumped by either above-gap or broad-band below-gap absorption. This strongly suggests that this high-concentration Er3+ center is an isolated, isoelectronic center consistent with Er3+ substituted on a Ga site. In contrast, a very small fraction of the Er atoms that form a variety of Er-defect/impurity complexes dominate the Er3+ emission spectra excited by above-gap and broad-band below-gap absorption because of their larger cross sections for both carrier capture and optical absorption.

Original languageEnglish (US)
Pages (from-to)266-274
Number of pages9
JournalJournal of Electronic Materials
Volume28
Issue number3
DOIs
StatePublished - Mar 1999
EventProceedings of the 1998 40th Electronic Materials Conference, EMC-98 - Charlottesville, VA, USA
Duration: Jun 24 1998Jun 26 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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