Abstract
A study of selectively excited photoluminescence (PL) at approximately 6 K in Er-implanted GaN as a function of annealing temperature (400-1000 °C) has detected nine different Er3+ centers with distinct approximately 1540 nm 4I13/2→4I15/2 Er3+ PL spectra and different activation temperatures. However, most of the optically active implanted Er atoms are incorporated at annealing temperatures as low as 400 °C on a single type of center for which PL can only be excited efficiently by direct intra-4f shell absorption and is not strongly pumped by either above-gap or broad-band below-gap absorption. This strongly suggests that this high-concentration Er3+ center is an isolated, isoelectronic center consistent with Er3+ substituted on a Ga site. In contrast, a very small fraction of the Er atoms that form a variety of Er-defect/impurity complexes dominate the Er3+ emission spectra excited by above-gap and broad-band below-gap absorption because of their larger cross sections for both carrier capture and optical absorption.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 266-274 |
| Number of pages | 9 |
| Journal | Journal of Electronic Materials |
| Volume | 28 |
| Issue number | 3 |
| DOIs | |
| State | Published - Mar 1999 |
| Event | Proceedings of the 1998 40th Electronic Materials Conference, EMC-98 - Charlottesville, VA, USA Duration: Jun 24 1998 → Jun 26 1998 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN. / Kim, S.; Rhee, S. J.; Li, Xiuling; Coleman, J. J.; Bishop, S. G.
In: Journal of Electronic Materials, Vol. 28, No. 3, 03.1999, p. 266-274.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN
AU - Kim, S.
AU - Rhee, S. J.
AU - Li, Xiuling
AU - Coleman, J. J.
AU - Bishop, S. G.
PY - 1999/3
Y1 - 1999/3
N2 - A study of selectively excited photoluminescence (PL) at approximately 6 K in Er-implanted GaN as a function of annealing temperature (400-1000 °C) has detected nine different Er3+ centers with distinct approximately 1540 nm 4I13/2→4I15/2 Er3+ PL spectra and different activation temperatures. However, most of the optically active implanted Er atoms are incorporated at annealing temperatures as low as 400 °C on a single type of center for which PL can only be excited efficiently by direct intra-4f shell absorption and is not strongly pumped by either above-gap or broad-band below-gap absorption. This strongly suggests that this high-concentration Er3+ center is an isolated, isoelectronic center consistent with Er3+ substituted on a Ga site. In contrast, a very small fraction of the Er atoms that form a variety of Er-defect/impurity complexes dominate the Er3+ emission spectra excited by above-gap and broad-band below-gap absorption because of their larger cross sections for both carrier capture and optical absorption.
AB - A study of selectively excited photoluminescence (PL) at approximately 6 K in Er-implanted GaN as a function of annealing temperature (400-1000 °C) has detected nine different Er3+ centers with distinct approximately 1540 nm 4I13/2→4I15/2 Er3+ PL spectra and different activation temperatures. However, most of the optically active implanted Er atoms are incorporated at annealing temperatures as low as 400 °C on a single type of center for which PL can only be excited efficiently by direct intra-4f shell absorption and is not strongly pumped by either above-gap or broad-band below-gap absorption. This strongly suggests that this high-concentration Er3+ center is an isolated, isoelectronic center consistent with Er3+ substituted on a Ga site. In contrast, a very small fraction of the Er atoms that form a variety of Er-defect/impurity complexes dominate the Er3+ emission spectra excited by above-gap and broad-band below-gap absorption because of their larger cross sections for both carrier capture and optical absorption.
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U2 - 10.1007/s11664-999-0026-x
DO - 10.1007/s11664-999-0026-x
M3 - Conference article
AN - SCOPUS:0032626471
VL - 28
SP - 266
EP - 274
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 3
ER -