Annealing studies of highly doped boron superlattices

T. E. Jackman, D. C. Houghton, J. A. Jackman, M. W. Denhoff, Song Kechang, J. McCaffrey, A. Rockett

Research output: Contribution to journalArticlepeer-review

Abstract

Coevaporation of B2 O3 during silicon molecular-beam epitaxy at growth temperatures (TG) varying from 540 to 800 °C has been used to prepare superlattice structures (pipi's) of varying boron concentration (3×1018 -3×1020 B cm -3). The superlattices were subsequently subjected to various annealing procedures and the layers were examined by secondary ion mass spectrometry, electrochemical profiling, and cross-sectional transmission electron microscopy. A significant redistribution of boron was observed even before annealing for TG >700 °C and high boron concentrations. In addition, significant oxygen was incorporated for TG ≤700 °C, with a growth rate of 0.5 nm s-1 and a B 2 O3 flux of 2×1013 cm- 2 s-1. After annealing, the boron diffusion coefficients were determined for the layers and found to vary significantly with TG.

Original languageEnglish (US)
Pages (from-to)1984-1992
Number of pages9
JournalJournal of Applied Physics
Volume66
Issue number5
DOIs
StatePublished - 1989

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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