Abstract
In order to obtain low-damage and vertical-etch profiles during etching of InP and In0.53Ga0.47As, we used inductively-coupled-plasma (ICP) etching with Cl2/N2 and Cl2/Ar gas chemistries at bias powers below 25 W. Vertical etch features were obtained at a gas mixture of Cl2 : N2 = 2 : 13 and a bias power of 25 W for both materials. In the etch process for InP using Cl2/N 2 gas chemistry, PNx was formed on the sample surface. The vapor pressure of PNx was significantly lower than that of PCl x as revealed by X-ray photoelectron spectroscopy (XPS) results. Therefore, through the sidewall passivation by PNx, the sidewall of InP was blocked from the etching species, and that resulted in a highly vertical profile at low bias power. On the other hand, in the etch process for InGaAs using Cl2/N2 gas chemistry, As-N bonds formed on the surface during the etching, and the sidewall passivation by As-N appeared to cause vertical etch profiles at low bias power.
Original language | English (US) |
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Pages (from-to) | 1130-1135 |
Number of pages | 6 |
Journal | Journal of the Korean Physical Society |
Volume | 50 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2007 |
Externally published | Yes |
Keywords
- Low bias
- Vapor pressure
- Vertical etch
ASJC Scopus subject areas
- General Physics and Astronomy