Anisothermal anodic bonding: A method to control global curvature and residual stress

M. Yadav, T. W. Lin, Harley T Johnson, G. P. Horn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The manipulation and characterization of residual stress and wafer curvature in anodically bonded structures is useful in improving the reliability of devices built on silicon on glass substrates. Conventional anodic bonding procedures lead to uncontrolled curvature of the bonded substrates as a result of locked-in residual stresses due to thermal expansion mismatch between silicon and Pyrex. A thermomechanical finite element model is used here to elucidate the effect of thermal variations in wafer temperature during anodic bonding. The results inform the development of an anisothermal recipe to control the resulting residual stresses and post bond wafer curvature and to understand the effects of process control on residual curvature. The model suggests that wafer curvature in anodically bonded substrates can be nearly eliminated by reducing the silicon bonding temperature slightly relative to the Pyrex temperature. A simple quantitative model to predict this effect shows promising agreement with experiments.

Original languageEnglish (US)
Title of host publicationSemiconductor Wafer Bonding 11
Subtitle of host publicationScience, Technology, and Applications - In Honor of Ulrich Gosele
Pages563-572
Number of pages10
Edition4
DOIs
StatePublished - Dec 1 2010
EventSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 10 2010Oct 15 2010

Publication series

NameECS Transactions
Number4
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/15/10

Fingerprint

Residual stresses
Silicon
Substrates
Temperature
Process control
Thermal expansion
Glass
Experiments
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yadav, M., Lin, T. W., Johnson, H. T., & Horn, G. P. (2010). Anisothermal anodic bonding: A method to control global curvature and residual stress. In Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele (4 ed., pp. 563-572). (ECS Transactions; Vol. 33, No. 4). https://doi.org/10.1149/1.3483548

Anisothermal anodic bonding : A method to control global curvature and residual stress. / Yadav, M.; Lin, T. W.; Johnson, Harley T; Horn, G. P.

Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4. ed. 2010. p. 563-572 (ECS Transactions; Vol. 33, No. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yadav, M, Lin, TW, Johnson, HT & Horn, GP 2010, Anisothermal anodic bonding: A method to control global curvature and residual stress. in Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4 edn, ECS Transactions, no. 4, vol. 33, pp. 563-572, Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3483548
Yadav M, Lin TW, Johnson HT, Horn GP. Anisothermal anodic bonding: A method to control global curvature and residual stress. In Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4 ed. 2010. p. 563-572. (ECS Transactions; 4). https://doi.org/10.1149/1.3483548
Yadav, M. ; Lin, T. W. ; Johnson, Harley T ; Horn, G. P. / Anisothermal anodic bonding : A method to control global curvature and residual stress. Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4. ed. 2010. pp. 563-572 (ECS Transactions; 4).
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