Abstract
The manipulation and characterization of residual stress and wafer curvature in anodically bonded structures is useful in improving the reliability of devices built on silicon on glass substrates. Conventional anodic bonding procedures lead to uncontrolled curvature of the bonded substrates as a result of locked-in residual stresses due to thermal expansion mismatch between silicon and Pyrex. A thermomechanical finite element model is used here to elucidate the effect of thermal variations in wafer temperature during anodic bonding. The results inform the development of an anisothermal recipe to control the resulting residual stresses and post bond wafer curvature and to understand the effects of process control on residual curvature. The model suggests that wafer curvature in anodically bonded substrates can be nearly eliminated by reducing the silicon bonding temperature slightly relative to the Pyrex temperature. A simple quantitative model to predict this effect shows promising agreement with experiments.
| Original language | English (US) |
|---|---|
| Title of host publication | Semiconductor Wafer Bonding 11 |
| Subtitle of host publication | Science, Technology, and Applications - In Honor of Ulrich Gosele |
| Pages | 563-572 |
| Number of pages | 10 |
| Edition | 4 |
| DOIs | |
| State | Published - Dec 1 2010 |
| Event | Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting - Las Vegas, NV, United States Duration: Oct 10 2010 → Oct 15 2010 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 4 |
| Volume | 33 |
| ISSN (Print) | 1938-5862 |
| ISSN (Electronic) | 1938-6737 |
Other
| Other | Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting |
|---|---|
| Country | United States |
| City | Las Vegas, NV |
| Period | 10/10/10 → 10/15/10 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Anisothermal anodic bonding : A method to control global curvature and residual stress. / Yadav, M.; Lin, T. W.; Johnson, Harley T; Horn, G. P.
Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4. ed. 2010. p. 563-572 (ECS Transactions; Vol. 33, No. 4).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Anisothermal anodic bonding
T2 - A method to control global curvature and residual stress
AU - Yadav, M.
AU - Lin, T. W.
AU - Johnson, Harley T
AU - Horn, G. P.
PY - 2010/12/1
Y1 - 2010/12/1
N2 - The manipulation and characterization of residual stress and wafer curvature in anodically bonded structures is useful in improving the reliability of devices built on silicon on glass substrates. Conventional anodic bonding procedures lead to uncontrolled curvature of the bonded substrates as a result of locked-in residual stresses due to thermal expansion mismatch between silicon and Pyrex. A thermomechanical finite element model is used here to elucidate the effect of thermal variations in wafer temperature during anodic bonding. The results inform the development of an anisothermal recipe to control the resulting residual stresses and post bond wafer curvature and to understand the effects of process control on residual curvature. The model suggests that wafer curvature in anodically bonded substrates can be nearly eliminated by reducing the silicon bonding temperature slightly relative to the Pyrex temperature. A simple quantitative model to predict this effect shows promising agreement with experiments.
AB - The manipulation and characterization of residual stress and wafer curvature in anodically bonded structures is useful in improving the reliability of devices built on silicon on glass substrates. Conventional anodic bonding procedures lead to uncontrolled curvature of the bonded substrates as a result of locked-in residual stresses due to thermal expansion mismatch between silicon and Pyrex. A thermomechanical finite element model is used here to elucidate the effect of thermal variations in wafer temperature during anodic bonding. The results inform the development of an anisothermal recipe to control the resulting residual stresses and post bond wafer curvature and to understand the effects of process control on residual curvature. The model suggests that wafer curvature in anodically bonded substrates can be nearly eliminated by reducing the silicon bonding temperature slightly relative to the Pyrex temperature. A simple quantitative model to predict this effect shows promising agreement with experiments.
UR - http://www.scopus.com/inward/record.url?scp=79952663854&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952663854&partnerID=8YFLogxK
U2 - 10.1149/1.3483548
DO - 10.1149/1.3483548
M3 - Conference contribution
AN - SCOPUS:79952663854
SN - 9781566778237
T3 - ECS Transactions
SP - 563
EP - 572
BT - Semiconductor Wafer Bonding 11
ER -