Anion effects on Cu-benzotriazole film formation

Karen L. Stewart, Jian Zhang, Shoutian Li, Phillip W. Carter, Andrew A Gewirth

Research output: Contribution to journalArticlepeer-review

Abstract

We examine the effect of different anions in solutions containing benzotriazole (BTA) on the Cu removal rate during chemical mechanical planarization (CMP). In solutions containing both Cl- and BTA, the Cu removal rate is nearly a factor of twenty lower than in solutions containing either Cl- or BTA alone. As-grown BTA films from solutions containing different anions are characterized using atomic force microscopy, ellipsometry, Raman spectroscopy, mass spectrometry, and open-circuit-potential measurements. Films grown from halide-containing solutions are found to be considerably thicker than those grown from other anions. The difference in Cu removal rate correlates well with the different as-grown film thicknesses.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume154
Issue number1
DOIs
StatePublished - Jan 1 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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