@inproceedings{6a3568ed31044db5848c83d1262eb7ca,
title = "Analytical modeling of external latchup",
abstract = "A model is presented for external latchup. The effects of spacing, temperature, supply voltage and layout are captured in the model. The model shows a good fit to data in two different technologies, RF-CMOS and SmartMOS.",
author = "Farzan Farbiz and Elyse Rosenbaum",
year = "2007",
doi = "10.1109/EOSESD.2007.4401772",
language = "English (US)",
isbn = "158537136X",
series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",
publisher = "ESD Association",
pages = "6A.21--6A.29",
booktitle = "2007 29th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD",
note = "2007 29th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD ; Conference date: 16-09-2007 Through 21-09-2007",
}