Analytical modeling of external latchup

Farzan Farbiz, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A model is presented for external latchup. The effects of spacing, temperature, supply voltage and layout are captured in the model. The model shows a good fit to data in two different technologies, RF-CMOS and SmartMOS.

Original languageEnglish (US)
Title of host publication2007 29th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD
PublisherESD Association
Pages6A.21-6A.29
ISBN (Print)158537136X, 9781585371365
DOIs
StatePublished - Jan 1 2007
Event2007 29th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD - Anaheim, CA, United States
Duration: Sep 16 2007Sep 21 2007

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Other

Other2007 29th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD
CountryUnited States
CityAnaheim, CA
Period9/16/079/21/07

ASJC Scopus subject areas

  • Management, Monitoring, Policy and Law
  • Fuel Technology
  • Condensed Matter Physics
  • Modeling and Simulation
  • Energy Engineering and Power Technology
  • Energy(all)
  • Renewable Energy, Sustainability and the Environment

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